Method for synthesizing beta-phase indium selenide flaky nanocrystalline by using hydrazine hydrate-assisted polyhydric alcohol solution

Abstract

The invention discloses a method for synthesizing beta-phase indium selenide flaky nanocrystalline by using a hydrazine hydrate-assisted polyhydric alcohol solution. The method comprises the following steps: firstly, weighing 0.1mol of tetrahydrate indium chloride and dissolving into 10ml of triethylene glycol to obtain a cationic precursor solution; additionally, adding 40ml of triethylene glycol to a three-necked round-bottomed flask; adding 0.15mmol of selenium powder, adding 0.1ml of hydrazine hydrate and introducing nitrogen to obtain an anionic source reaction base fluid; putting the three-neck bottle into a thermal reaction reflux device, introducing nitrogen, slowly heating the anionic source reaction base fluid, quickly injecting the cationic precursor solution until the injection temperature / reflux temperature ranges from 250 / 250 DEG C to 270 / 270 DEG C, so as to obtain a reaction solution containing indium selenide nanocrystalline; and centrifugally separating and purifying the reaction solution to prepare In2Se3 nanocrystalline. The entire reaction of the method is mild in condition, safe, low in toxicity, simple and convenient to operate and low in cost; the product is single and stable in phase and relatively good in repeatability, and the stoichiometric ratio accords with the standard ratio.

Description

technical field [0001] The invention relates to nanometer materials, in particular to a method for synthesizing β-phase indium selenide flake nanocrystals from a polyol-based solution. Background technique [0002] Indium Selenide (In 2 Se 3 ) as a metal chalcogenide of Group III–VI has excellent visible light absorption performance and phase change storage performance, and is widely used in the fields of photodetectors, optical filter devices, sensors, solar cells, photo-water splitting components, and phase change memories. have potential application value. InSe is an n-type semiconductor with a direct bandgap. In 2 Se 3 It has a double-layer structure, and the strong chemical bond force within the layer and the weak van der Waals force between the layers make indium selenide have an anisotropic structure, which in turn has excellent electrical, optical, and magnetic properties. [0003] In 2 Se 3 It has a variety of crystal structures, namely α, β, γ, δ, and κ, am...

AI Technical Summary

Problems solved by technology

[0006] In view of the disadvantages of high cost and pollution in the prior art, the present invention adopts a low-carbon chain polyol solvent with less pollution, low toxicity, high boiling point and low cost as the reaction medium, adopts a polyol-based solution chemical synthesis method, and uses hydrazine hydrate As a reaction auxiliary agent, it provides a preparation In which is safe in process, green and non-toxic, simple in operation, low in cost, stable and single in the synthetic product phase, and beneficial to product purity and stoichiometric control. 2 Se 3 Flaky Nanocrystal Method

Images