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Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device

An electrostatic chuck and manufacturing method technology, applied in the direction of electrical solid devices, semiconductor/solid device manufacturing, circuits, etc., can solve the problem of destroying the adhesive force between the main body and the base, easily exceeding 100°C, and the main body falling off, etc. Problems, achieve the effect of enhancing plasma resistance, improving service life, and avoiding structural instability

Active Publication Date: 2014-12-24
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when PEPVD is used to deposit the corrosion-resistant coating, the temperature of the electrostatic chuck will easily exceed 100°C as the process time increases, which will seriously damage the adhesion of the adhesive between the main body and the base, and even cause the main body Part falls off from the base, resulting in damage to the electrostatic chuck

Method used

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  • Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device
  • Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device
  • Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device

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Embodiment Construction

[0025] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings of the specification. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0026] The manufacturing method of the electrostatic chuck of the present invention will be described in detail below.

[0027] figure 1 Shown is a schematic flow chart of the manufacturing method of the present invention, which includes the following steps:

[0028] Step S1: manufacturing the electrostatic chuck main body and the base;

[0029] Step S2: Connect the main body and the base to form an electrostatic chuck.

[0030] The electrostatic chuck base is generally made of metal such as aluminum, titanium alloy, or stainless steel, which is conduc...

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Abstract

The invention discloses a manufacturing method of an electrostatic suction cup. The manufacturing method comprises the step of manufacturing a body and a base of the electrostatic suction cup and the step of connecting the body and the base into a whole. According to the step of manufacturing the body of the electrostatic suction cup, a ceramic substrate embedded with a thin film electrode is formed, the upper surface of the ceramic substrate is imaged, a protection layer resistant to plasma erosion is deposited on the surface of the ceramic substrate, and the body of the electrostatic suction cup is formed. According to the manufacturing method, the plasma erosion resisting performance and the structural stability of the electrostatic suction cup can be effectively improved, and the service life of the electrostatic suction cup can be effectively prolonged.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of an electrostatic chuck, an electrostatic chuck and a plasma processing device containing the electrostatic chuck. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, plasma treatment processes have been widely used in the manufacturing process of semiconductor components. The aforementioned processes, such as deposition and etching processes, are usually performed in a plasma processing apparatus. Generally speaking, the plasma processing apparatus includes a chamber, a gas shower head used to provide process gas from a gas supply source to the chamber, and an electrostatic chuck (Electrostatic chuck, referred to as ESC) for fixing and supporting a substrate. The electrostatic chuck is usually set at the bottom of the chamber of the plasma processing device as the bottom electrode to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01J37/32
CPCH01J37/32458H01L21/6831H01L21/6833H01L2221/68304
Inventor 贺小明倪图强浦远
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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