Method for preparing carbon-doped TiO2 film by using two-step method

Abstract

The invention discloses a method for preparing a carbon-doped TiO2 film by using a two-step method. The method comprises the following steps: (1) a TiO2 film is prepared by adopting a magnetron sputtering method; processed glass, silicon sheet and titanium sheet substrates are put in place; a TiO2 ceramic target serves as a sputtering target; a background is kept in 2*10-3 Pa order of magnitude in vacuum; 99.999% of argon and compensate oxygen are charged; the sputtering power is 300 W; the sputtering time is 30 minutes; and the temperature is kept for 2 hours in the air of 500 DEG C, and is naturally reduced; and (2) C is injected in the TiO2 film by using an ion injecting method; samples are put in an ion injecting chamber; CH4 gas is charged; the pressure is 1 Pa; the radio-frequency power is 40 W; the voltage is respectively 8, 10, 12, 14 and 16 kV; and the frequency is 50 Hz. The injecting time of each sample is 30 minutes. The C-TiO2 film prepared by the method has excellent light degradation effect.

Description

technical field [0001] The present invention relates to carbon, in particular to carbon-doped TiO 2 The method of film preparation. Background technique [0002] While energy has become the bottleneck of economic and social development in all countries in the world, the control and treatment of environmental pollution and the development and utilization of new energy are also serious problems that must be faced by human beings for sustainable development. Therefore, in recent years, the research on semiconductor photocatalytic technology much attention. The so-called photocatalysis means that after the semiconductor is irradiated by light, some highly active substances will be produced on the surface. These active substances promote the synthesis of organic compounds or degrade organic compounds into low molecular weight substances. At present, some common semiconductor catalysts are n-type semiconductor oxides, such as TiO 2 , ZnO, ZnS, WO 3 , SiO 2 , SnO 2 , CdS,...

AI Technical Summary

Problems solved by technology

At present, some common semiconductor catalysts are n-type semiconductor oxides, such as TiO 2 , ZnO, ZnS, WO 3 , SiO 2 , SnO 2 , CdS, In 2 o 3 etc., but most photocatalysts are difficult to popularize and apply due to toxicity or corrosion, among which only TiO 2 It has become one of the widely used photocatalysts due to its acid and alkali resistance, light corrosion, non-toxicity and low cost.

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