Front structure of power semiconductor chip and manufacturing method of front structure of power semiconductor chip

Abstract

The invention provides a front structure of a power semiconductor chip and a manufacturing method of the front structure of the power semiconductor chip. The manufacturing method includes the steps of providing a substrate in the first conduction type, wherein the substrate comprises a substrate front face, and the substrate front face comprises a first son surface, a second son surface and a third son surface; forming an electrode area in a first son surface area of the substrate, and forming a channel cut-off ring in the first conduction type in the third son surface area, wherein the electrode area at least comprises an electrode, each electrode comprises a source area in the first conduction type, and the channel cut-off ring and the source areas are formed at the same time. By means of the manufacturing method, the manufacturing technological processes of the front structure of the power semiconductor chip are simplified, and technological cost is reduced. In addition, the voltage-resistant property of the chip cannot be reduced by means of the front structure of the power semiconductor chip.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a front structure of a power semiconductor chip and a preparation method thereof. Background technique [0002] Generally, in order to prevent inversion of the substrate silicon surface of the semiconductor chip, and to maintain the stability of the silicon surface, reduce the reverse leakage current, prevent the creep of the breakdown voltage, and improve the withstand voltage and withstand voltage stability of the chip, in the power semiconductor chip The outermost periphery of the front is provided with a channel stop ring. The channel stop ring is doped with the same conductivity type as the chip substrate. For example, if the conductivity type of the substrate is N type, then the conductivity type of the impurity doped in the channel stop ring is also N type. [0003] In the conventional structure of the existing power semiconductor chip, the junction depth of the chan...

AI Technical Summary

Problems solved by technology

[0004] The preparation process of the front structure of the power semiconductor chip that requires a separate channel stop ring is complicated

Moreover, since the junction depth of the channel stop ring needs to reach a deeper depth, a higher high-temperature processing process is required, which leads to an increase in the process cost of the chip.

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