A radiation detector crosstalk isolation and radiation hardened pixel structure and its manufacturing method

Abstract

The invention relates to a radiation detector crosstalk segregating radiating reinforcing pixel structure and a manufacturing method thereof. The structure comprises an electrode field plate, a P well, a P + area, an insulating medium material, N type bulk silicon, an N type MOSFET, a P type MOSFET, a back electrode, a field plate metal electrode, a P + extracting electrode and a connecting field plate groove. According to the invention, the radiation detector pixel structure provides with an air gap and a groove field plate is adopted, an air gap separating structure exists between a top silicon MOSFET and a middle electrode filed plate and can effectively prevent a bottom electric potential from expanding towards the top silicon MOSFET area, and a TID effect generates in an insulating medium after shielding radiation ionization; the MOSFET in a circuit is surrounded by the groove silicon connected with the electrode field plate, the structure can further reduce the parasitic capacitance between the circuit and a sensor, and two parts of signals can be effectively prevented from crosstalk.

Description

technical field [0001] The invention relates to a radiation detector crosstalk isolation and radiation reinforced pixel structure and a method for manufacturing the radiation detector crosstalk isolation and radiation reinforced pixel structure. Background technique [0002] The radiation detector detects the charged particles by collecting the non-equilibrium carriers generated by the ionization reaction between the charged particles and the silicon atoms around the incident path of the radiation particles. Key parameters to measure its performance include resolution, signal-to-noise ratio, readout speed, and radiation hardening capabilities. In order to further improve the signal-to-noise ratio and radiation hardening capability of the radiation detector, as well as improve the charge collection efficiency and collection time, it is necessary to study the structure of the pixel sensor and the transmission tube, and provide an improvement plan for the charge collection mech...

AI Technical Summary

Problems solved by technology

[0004] The article "F.F.Khalid, G.W.Deptuch, A.Shenai, et al. Monolithic Active PixelMatrix with Binary Counters (MAMBO) ASIC. Nuclear Science Symposium Conference Record (NSS / MIC), 2010IEEE.2010, 1544-1550." proposes nested wells Nested well structure (Nested well structure NWS), this structure can isolate the crosstalk between the circuit and the sensor, but in order to avoid the back gate effect of this structure, the P well structure must completely contain the circuit part, and cannot be independently optimized

The article "T.Miyoshi, Recent progress indevelopment of SOI pixel detectors.Nuclear Science Symposium Conference Record (NSS / MIC), 2010 IEEE.2010, 1885-1888." proposes a dual silicon-on-insulator (DSOI) pixel structure. The structure contains a horizontal field plate, and the potential of the field plate is adjustable. This structure can also well isolate the crosstalk between the circuit and the sensor, but because of the buried oxygen structure, a large number of hole traps are introduced under radiation conditions, resulting in Total ionizing dose (Total Ionizing Dose-TID) effect

The published patent "Application No.: CN200980133383, Cheng Luoyun, Shallow Trench Isolation Structure with Air Gap, Complementary Metal-Oxide Semiconductor Image Sensor Using the Shallow Trench Isolation Structure and Its Manufacturer" provides the air gap shallow trench Isolation structure, but this structure is mainly an isolation structure between pixels, and the existing air gap can prevent the dark current generated by the oxide medium from affecting the main pixel signal, which is not related to the problem to be solved in this patent

Therefore, there is an urgent need to solve the crosstalk between the circuit and the sensor in the SOI radiation detector pixel and the radiation TID effect

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