Packaging lead wire material structure and processing method thereof
A wire material and processing method technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of poor yield, slow speed, complex circuits, etc., and improve the ability of electron transmission , Reduce the amount of gold used, the effect of low thermal expansion coefficient
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[0020] Such as figure 1 As shown, the structure of a package wire material disclosed by the present invention is composed of an intermediate core 1 and a surface coating 2, the intermediate core 1 is a tungsten wire, the diameter of the tungsten wire is preferably 12.7 microns, the surface coating 2 is gold, and the surface coating The thickness is preferably 2 microns, thereby forming a structure of tungsten inside and gold outside.
[0021] Such as figure 2 As shown, a packaging wire material disclosed in the present invention is processed according to the following steps.
[0022] The first step, molding.
[0023] Put a fixed weight of tungsten powder into a stainless steel mold and extrude it into a whole rod.
[0024] The second step is pre-sintering.
[0025] Place the fragile rod in the first step in a refractory metal vessel and put it into a hydrogen sintering furnace at a high temperature of 1200-1600°C to continuously agglomerate the metal particles; during thi...
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