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A kind of preparation method of copper indium selenium tellurium nanowire

A tellurium nanowire and copper indium selenide technology, which is applied in the field of a new generation of thin-film solar cell materials, can solve problems such as non-nanowires, and achieve the effect of simple operation process and cheap instruments and equipment.

Active Publication Date: 2016-07-06
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is still a challenge to prepare quaternary system nanowires by SLS method, because the activity of each component is different, it may form a heterogeneous mixed system, or it may not produce nanowires. Therefore, how to obtain quaternary system nanowires is a subject worthy of discussion

Method used

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  • A kind of preparation method of copper indium selenium tellurium nanowire
  • A kind of preparation method of copper indium selenium tellurium nanowire
  • A kind of preparation method of copper indium selenium tellurium nanowire

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Experimental program
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Effect test

Embodiment 1

[0034] 1. Preparation of catalyst - toluene solution of bismuth nanoparticles:

[0035] Mix 0.5 mL of 1 mol / L bis(trimethylsilyl)aminobismuth tetrahydrofuran solution with a content of bis(trimethylsilyl)amide bismuth and 2 mL of bis(trimethylsilyl)amide with a content of 1 mol / L The tetrahydrofuran solution of sodium bis(trimethylsilyl)amide of L was mixed to form a mixed solution containing bismuth precursor, which was placed in a syringe.

[0036] Another 5 g of polyvinylpyrrolidone-hexadecane block copolymer and 15 g of diphenyl ether were magnetically stirred and heated to 180° C. under nitrogen protection to form a reaction system.

[0037] The mixed solution containing bismuth precursor was injected into the reaction system, and the solution changed color rapidly to black. After reacting for 30 minutes, remove the heat source, cool to room temperature, then add 30mL of methanol and centrifuge, use a mixed solvent of toluene and methanol to repeatedly disperse and centrif...

Embodiment 2

[0049] 1. Preparation of catalyst - toluene solution of bismuth nanoparticles:

[0050] Mix 0.5 mL of 1 mol / L bis(trimethylsilyl)aminobismuth tetrahydrofuran solution with a content of bis(trimethylsilyl)amide bismuth and 2 mL of bis(trimethylsilyl)amide with a content of 1 mol / L The tetrahydrofuran solution of sodium bis(trimethylsilyl)amide of L was mixed to form a mixed solution containing bismuth precursor, which was placed in a syringe.

[0051] Another 5 g of polyvinylpyrrolidone-hexadecane block copolymer and 15 g of diphenyl ether were magnetically stirred and heated to 180° C. under nitrogen protection to form a reaction system.

[0052] The mixed solution containing bismuth precursor was injected into the reaction system, and the solution changed color rapidly to black. After reacting for 30 minutes, remove the heat source, cool to room temperature, then add 30mL of methanol and centrifuge, use a mixed solvent of toluene and methanol to repeatedly disperse and centr...

Embodiment 3

[0064] 1. Preparation of catalyst - toluene solution of bismuth nanoparticles:

[0065] Mix 0.5 mL of 1 mol / L bis(trimethylsilyl)aminobismuth tetrahydrofuran solution with a content of bis(trimethylsilyl)amide bismuth and 2 mL of bis(trimethylsilyl)amide with a content of 1 mol / L The tetrahydrofuran solution of sodium bis(trimethylsilyl)amide of L was mixed to form a mixed solution containing bismuth precursor, which was placed in a syringe.

[0066] Another 5 g of polyvinylpyrrolidone-hexadecane block copolymer and 15 g of diphenyl ether were magnetically stirred and heated to 180° C. under nitrogen protection to form a reaction system.

[0067] The mixed solution containing bismuth precursor was injected into the reaction system, and the solution changed color rapidly to black. After reacting for 30 minutes, remove the heat source, cool to room temperature, then add 30mL of methanol and centrifuge, use a mixed solvent of toluene and methanol to repeatedly disperse and centr...

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Abstract

A preparation method of a CIST nano wire belongs to the technical field of new-generation thin-film solar cell materials. A toluene solution of Bi nanoparticles and a precursor solution of Se and Te are prepared separately. Then under the protection of nitrogen, trioctylphosphine is heated and added into the toluene solution of the Bi nanoparticles, and then the precursor solution containing indium acetate, copper acetate and Se is added into the mixture. After reactions, the precursor solution containing indium acetate, copper acetate and Se is added drop by drop. After reactions are completed, the mixture is cooled and toluene is added. Then the mixture is subjected to centrifugation. The solid phase is taken, is washed with toluene, and is subjected to centrifugation and vacuum drying. Then the CIST nano wire is obtained. The method uses the metal Bi nanoparticles as a catalyst. The toluene solution of the Bi nanoparticles is used, so that the concentration of the Bi nanoparticles can be effectively controlled, and the liquid form facilitates taking the catalyst. The method is simple in technique, can effectively control the stoichiometric ratio of multi-component materials, and obtains a large batch of high-purity CIST nano wires.

Description

technical field [0001] The invention belongs to the technical field of new-generation thin-film solar cell materials, and specifically relates to a preparation method of copper indium selenium tellurium nanowires. Background technique [0002] copper indium selenide (CuInSe 2 , CIS) is a group I-III-VI compound semiconductor with two allotropic crystal structures of chalcopyrite and sphalerite. Copper indium selenide is a thin film solar cell material with excellent performance. The copper indium selenide thin film solar cell material has an approximately optimal optical energy gap and a high absorptivity (ratio of absorption to incident luminous flux) (10 5 cm –1 ), strong radiation resistance and long-term stability. Its energy gap can also be adjusted by partially substituting Ga and Al for In, or partially substituting S for Se. Copper indium selenide thin film solar cells are compound semiconductor photovoltaic devices with high technical integration, which are comp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00H01L31/0322Y02E10/541Y02P70/50
Inventor 陈铭沈枭杜江
Owner YANGZHOU UNIV
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