Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Processing method of integrated piezoresistive accelerometer and pressure meter which are based on prefabricated cavity SOI (silicon on insulator) substrate

A technology of accelerometers and processing methods, applied in the direction of acceleration measurement using inertial force, technology for producing decorative surface effects, microstructure devices composed of deformable elements, etc., which can solve the problem of device sensitivity reduction, lateral piezoresistance Problems such as small coefficient, difficult corrosion progress detection, etc., achieve the effect of large piezoresistive coefficient, accurate thickness and size, and save the vacuum packaging step

Inactive Publication Date: 2014-09-24
PEKING UNIV
View PDF6 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the substrate of the process is limited to the (111) crystal plane instead of the very commonly used (100) crystal plane. The small lateral piezoresistive coefficient of this crystal plane reduces the sensitivity of the device, and it is difficult to detect the corrosion progress in the process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing method of integrated piezoresistive accelerometer and pressure meter which are based on prefabricated cavity SOI (silicon on insulator) substrate
  • Processing method of integrated piezoresistive accelerometer and pressure meter which are based on prefabricated cavity SOI (silicon on insulator) substrate
  • Processing method of integrated piezoresistive accelerometer and pressure meter which are based on prefabricated cavity SOI (silicon on insulator) substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0038] Figure 1A ~ Figure 1C It is a structural schematic diagram of the integrated piezoresistive accelerometer and pressure gauge based on the prefabricated cavity SOI substrate according to the present invention. Figure 1A The structural representation of the integrated piezoresistive accelerometer and pressure gauge based on the prefabricated cavity SOI substrate processed for the present invention, Figure 1B for Figure 1A A-A' sectional view of an integrated piezoresistive accelerometer and pressure gauge based on a prefabricated cavity SOI substrate as described in, Figure 1C for Figure 1A An enlarged view of the accelerometer cantilever portion of the integrated piezoresistive accelerometer and pressure ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a processing method of an integrated piezoresistive accelerometer and a pressure meter which are based on a prefabricated cavity SOI (silicon on insulator) substrate. The accelerometer comprises an elastic beam-mass block structure with a force sensitive resistor, and the pressure meter comprises a pressure sensitive diaphragm with a force sensitive resistor. The method is as follows: preparing dosage concentration resistor stripes as the force sensitive resistor and a temperature sensitive resistor on a device layer of the SOI substrate; processing a metal wire layer and a passivation layer; deeply etching to the prefabricated cavity, releasing the elastic beam-mass block structure; and bonding a cover sheet cover to protect the movable structure. Compared with the prior art, according to the processing method, the symmetrical elastic beam-mass block structure with precise size can be processed by a single-surface and single-step process, a monocrystalline silicon sensitive resistor and the temperature sensitive resistor of the accelerometer and the pressure meter can be processed, the device sensitivity is high, the process repeatability is good, a vacuum packaging step of a traditional absolute-pressure pressure meter is omitted; and the prepared elastic beam-mass block structure is universal.

Description

technical field [0001] The invention relates to the field of microelectronic machinery (MEMS) processing, in particular to a processing method for an integrated piezoresistive accelerometer and pressure gauge based on a prefabricated cavity SOI substrate. Background technique [0002] Silicon accelerometers and pressure gauges manufactured by MEMS technology are widely used in automobiles, consumer electronics, navigation, military, oil exploration, geological testing, etc. After the emergence of silicon microsensors, they have the advantages of small size, high precision, fast response, low cost of mass production, and convenient detection, etc., and have replaced traditional sensors to a large extent. Especially in the field of automotive electronics, the small-volume multifunctional sensor integrated pressure gauge and accelerometer produced by IC technology has broad market prospects. [0003] Piezoresistive microsensors use the piezoresistive effect of silicon semicond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00B81B3/00G01P15/12G01L1/22
Inventor 张扬熙杨琛琛高成臣
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com