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Forming method of semiconductor structure

A semiconductor and thin film technology, applied in the field of semiconductor structure formation, can solve the problems of difficult to precisely control the size of transistors, unstable performance of semiconductor devices, etc., and achieve the effects of stable and good performance, accurate and easy-to-control feature size, and accurate feature size standard.

Active Publication Date: 2014-09-03
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0005] However, as the size of transistors continues to shrink, it is difficult to precisely control the size of transistors, resulting in unstable performance of semiconductor devices

Method used

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  • Forming method of semiconductor structure

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Embodiment Construction

[0026] As described in the background, as the size of transistors continues to shrink, it is difficult to precisely control the size of transistors, resulting in unstable performance of semiconductor devices.

[0027] Figure 2 to Figure 3 is a form such as figure 1 A schematic cross-sectional structure diagram of a part of the process of the transistor shown, including:

[0028] Please refer to figure 2 Forming a silicon oxide film 201, a high-K dielectric film 202 on the surface of the silicon oxide film 201, and a polysilicon film 203 on the surface of the high-K dielectric film 202 on the surface of the semiconductor substrate 200; forming a silicon nitride layer on the surface of the polysilicon film 203 204, and the silicon oxide layer 205 on the surface of the silicon nitride layer 204.

[0029] Wherein, the polysilicon film 203 is used to form a dummy gate layer, and the dummy gate layer occupies a spatial position for a subsequently formed metal gate; the silicon ...

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Abstract

A forming method of a semiconductor structure comprises the following steps: providing a semiconductor substrate, a surface of the semiconductor substrate is provided with a stop layer, a surface of the stop layer is provided with a grid electrode film, partial surface of the grid electrode film is provided with a first mask layer, a surface of the first mask layer is provided with a second mask layer, wherein the second mask layer and the stop layer are made of the same material, and the first mask layer and the second mask layer are made of different material; forming a protection layer on a side wall surface of the first mask layer, and the protection, the second mask layer and the stop layer are made of the same material; etching the grid electrode film by using the second mask layer as a mask after the protection layer is formed until the surface of the stop layer is exposed, thereby forming the grid electrode layer; the size of the formed semiconductor structure is easily and accurately controlled, so the formed semiconductor device is stable in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in integrated circuits, especially MOS (Metal Oxide Semiconductor, metal-oxide-semiconductor) devices, has been continuously reduced to meet the miniaturization and development of integrated circuits. Integration requirements. In the process of continuous shrinking of the size of MOS transistor devices, the process of using silicon oxide or silicon oxynitride as the gate dielectric layer in the existing process is challenged. Transistors formed with silicon oxide or silicon oxynitride as the gate dielectric layer have some problems, including increased leakage current and diffusion of impurities, which affect the threshold voltage of the transistor and further affect the perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
CPCH01L21/28035
Inventor 何其旸
Owner SEMICON MFG INT (SHANGHAI) CORP
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