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A nanometer-precision electrochemical etching processing method

A processing method and electrochemical technology, applied in the direction of electrolysis process, electrolysis components, etc., can solve the problems of high cost, increased etching process steps, and high manufacturing difficulty

Active Publication Date: 2016-08-24
XIAMEN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are two main problems in further improving the machining accuracy to the nanometer level. One is that the distance and parallelism between the template electrode and the workpiece surface must be able to achieve nanoscale and precision control. A sufficient amount of capture agent can still be supplied in the formed large-area nanogap
Although the above-mentioned problems can be solved together by designing and manufacturing an ultra-high-precision distance control system (CN 101880907), the manufacturing of such equipment is difficult and expensive, and the process steps of etching processing also increase accordingly

Method used

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  • A nanometer-precision electrochemical etching processing method
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  • A nanometer-precision electrochemical etching processing method

Examples

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Effect test

Embodiment 1

[0041] figure 1 A schematic diagram of the device composition of the embodiment of the electrochemical etching processing method of the present invention is given. The template electrode 4 stands vertically on the surface of the workpiece 5 naturally, and the surface of the template electrode 4 and the workpiece 5 is separated by a hydrated gel polymer ultra-thin film 6 containing electrochemically active groups; The line 9 is connected to the electrochemical workstation 1 to become an electrochemical working electrode. The electrochemical system also includes an auxiliary electrode 2, a reference electrode 3, a working solution 7, and a container 8. The container 8 is placed on the active vibration isolation workbench 10.

[0042] Electrochemical etching processing method of the present invention, its working principle is:

[0043] (1) Use a soft hydrated gel polymer ultra-thin film containing electrochemically active groups to separate the template electrode and the workpie...

Embodiment 2

[0052] In Example 2, the template electrode 4 is an ultra-smooth glassy carbon disc electrode with a diameter of 3 mm, the auxiliary electrode 2 is a platinum electrode, the reference electrode 3 is a saturated calomel electrode, and the workpiece 5 is an oxygen-free metal copper material. Etching process contains 0.1mol / dm at pH 3.0 3 Acetic acid and 0.2mol / dm 3 Carry out in the working solution 7 of sodium sulfate, temperature is kept on 25 ℃, and concrete implementation process is as follows:

[0053] (1) First remove the oxygen containing 0.0044mol / dm 3 [Ru(bpy) 2 (vp) 2 ](PF6 ) 2 and 0.1mol / dm 3 Bu 4 NPF 6 (bpy: bipyridine; vp: vinylpyridine; PF 6 - : hexafluorophosphate ion; Bu 4 N + : Tetrabutyl quaternary ammonium cation), with metal platinum as the auxiliary electrode, metal silver wire as the reference electrode, using a speed of 0.2V / s to scan 100 cycles in the potential interval from 0 to -2.0V, on the template electrode 4 Electrochemically polymerize a...

Embodiment 3

[0059] In Example 3, the template electrode 4 is a platinum metal wire electrode with a diameter of 50 μm, the auxiliary electrode 2 is a platinum electrode, the reference electrode 3 is a saturated calomel electrode, and the workpiece 5 is a gallium arsenide material. Etching process contains 0.1mol / dm at pH 3.0 3 Acetic acid and 0.2mol / dm 3 Carry out in the working solution 7 of sodium sulfate, temperature is kept on 25 ℃, and concrete implementation process is as follows:

[0060] (1) First remove the oxygen containing 0.0044mol / dm 3 [Ru(bpy) 2 (vp) 2 ](PF 6 ) 2 and 0.1mol / dm 3 Bu 4 NPF 6 In the acetonitrile solvent or dimethyl sulfoxide solvent, the metal platinum is used as the auxiliary electrode, the metal silver wire is used as the reference electrode, and the scanning speed is 0.2V / s, and the potential range of 0 to -2.0V is scanned for 200 cycles. Electrochemically polymerize a layer of hydrated gel polymer ultra-thin film 6 containing bipyridyl ruthenium gr...

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Abstract

The invention discloses a nanometer-precision electrochemical etching processing method, which comprises the following steps: fixing a layer of redox hydration gel polymer ultra-thin film on the surface of a template electrode or a workpiece; immersing the template electrode and the workpiece in a working solution, stacking Put it on the bottom of the container, so that the surface of the template electrode and the surface of the workpiece are in natural close contact with the two sides of the soft polymer ultra-thin film; in addition, an auxiliary electrode and a reference electrode are set in the container, and are connected to the electrochemical controller; start the electrochemical The controller adjusts the potential of the template electrode, electrochemically oxidizes the electrochemically active groups in the ultra-thin film, and quickly chemically oxidizes the surface of the workpiece in contact with it to capture electrons, and the electrons lost on the surface of the workpiece are slowly transferred by the ultra-thin film to the template electrode to continue the etching; after the etching is completed, turn off the electrochemical controller and remove the template electrode. The method can etch and process the complementary structure of the microstructure pattern on the surface of the template electrode on the surface of the workpiece with nanometer precision.

Description

technical field [0001] The invention relates to an electrochemical nano-processing technology, in particular to a large-area and batch-scale electrochemical etching processing method for the surface of metals, alloys and semiconductors. technical background [0002] Microsystems include microelectronics, micro-electromechanical, micro-optics and micro-opto-electromechanical systems, which are of self-evident importance in many fields of national defense, military affairs and national economy and people's livelihood. In recent years, with the rapid development of various application fields, the requirements for the performance of microsystems are also increasing, and further reducing the feature size of devices in microsystems and improving the surface quality of devices have been recognized by the industry as the key common issues for improving the performance of microsystems . However, as the feature size of devices in microsystems shrinks to submicron and nanometer levels...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25F3/14C25F7/00
Inventor 时康田中群张红万康仁科张劲福田昭武周平王成单坤周剑章吴丹
Owner XIAMEN UNIV
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