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Method for manufacturing quasi-monocrystalline silicon solar cells

A technology of solar cells and manufacturing methods, which is applied in the field of solar cells, can solve the problems of being lower than monocrystalline silicon cells, and that cells cannot obtain the advantages of quasi-single crystal silicon chips, and achieve uniform performance, improve photoelectric conversion efficiency, and reduce Effect of shading area

Inactive Publication Date: 2016-08-10
JIANGSU AIDUO PV TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Because the atomic arrangement structure in quasi-single crystal silicon is different from that of single crystal silicon wafer or polycrystalline silicon wafer, in addition to (100) grains, there are also grains with other crystal orientations in silicon wafers, that is, polycrystalline grains; therefore, for quasi-single crystal silicon wafers For solar cells based on monocrystalline silicon wafers, if they copy the manufacturing methods of monocrystalline silicon or polycrystalline silicon solar cells, especially their diffusion and texturing methods, the prepared solar cells will not be able to obtain the expected quasi-single Because of the advantages of crystalline silicon wafers, it is necessary to develop a manufacturing process suitable for quasi-monocrystalline silicon solar cells to produce a photoelectric conversion efficiency higher than that of polycrystalline silicon solar cells, but lower in cost than monocrystalline silicon solar cells. quasi-monocrystalline silicon cell

Method used

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Embodiment 1

[0030] The present invention is a kind of manufacture method of quasi-single crystal silicon solar cell, it is characterized in that comprising the following steps successively:

[0031] S1. Texturing process: make a textured surface on the surface of the quasi-single crystal silicon wafer and clean it. The specific process is: first use a mixture of hydrofluoric acid and nitric acid to remove defects and mechanical damage layers on the surface of the quasi-single crystal silicon wafer. The total volume percentage of acid and nitric acid is 50~80%, the volume ratio of hydrofluoric acid and nitric acid is 1:6~7, preferably the volume ratio of hydrofluoric acid and nitric acid is 70:460, and then wash with deionized water , and then use a mixture of hydrochloric acid and nitric acid to remove the metal ion impurities on the surface of the quasi-single crystal silicon wafer, then wash it with deionized water, and finally dry the quasi-single crystal silicon wafer with compressed a...

Embodiment 2

[0042] On the basis of Example 1, this embodiment is preferred: after the quasi-single crystal silicon wafer is cleaned with a mixture of hydrofluoric acid and nitric acid in the step S1, the quasi-single crystal silicon wafer is also cleaned with lye, and then hydrochloric acid is used to clean the quasi-single crystal silicon wafer. and nitric acid to remove metal ion impurities on the surface of quasi-single crystal silicon wafers.

[0043] After the quasi-single crystal 156 silicon wafer undergoes the texturing process, the surface reflectance is tested, and the result is 21%; after the S2 light doping diffusion treatment, the square resistance value is tested, and the result is above 75Ω / □. The photoelectric conversion efficiency of the cell was tested under the conditions of AM1.5, temperature 25°C, and light intensity 1000W, and the result was 17.85~17.90%.

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Abstract

The invention relates to a manufacturing method of a quasi monocrystalline silicon solar cell. According to the manufacturing method, quasi monocrystalline silicon is introduced as the base material of the solar cell. On the basis of a traditional monocrystalline and polycrystalline silicon solar cell manufacturing method, the surface reflectivity of a textured silicon wafer is reduced from 26% to 21% by improving the corrosion amount of the silicon wafer, and the square resistance of the diffused silicon wafer is increased to above 75ohm / square by adjusting the diffusion process. In addition, after heavy doping diffusion, PN nodes at the edge of the silicon wafer are isolated with the help of laser, the positioning process of the silicon wafer is simplified, and the production efficiency of products is improved. Meanwhile, a designed novel electrode grid line reduces the printing consumption of positive silver paste, reduces the shading area of the cell and improves the open-circuit voltage and the short-circuit current. The factors act jointly to make the photoelectric conversion efficiency of the cell up to 17.80%, and an unexpected technical effect is achieved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for manufacturing quasi-monocrystalline silicon solar cells. Background technique [0002] According to the development law of the market and the requirements of the large market environment for photovoltaic production enterprises and the needs of the enterprise's own development, reducing production costs is an eternal topic and direction that enterprises are always pursuing. At present, solar cells manufactured by the photovoltaic industry mainly include monocrystalline silicon solar cells and polycrystalline silicon solar cells. Although monocrystalline silicon cells have the advantages of less crystal defects, low reflectivity, and high mechanical strength, they have high cost, serious light attenuation, and severe power consumption; while polycrystalline silicon cells consume less energy and have lower light attenuation than monocrystalline silicon cells , low cost, but ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L21/02021H01L21/2225H01L21/223H01L31/022433H01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 卢君马嫣明李向清
Owner JIANGSU AIDUO PV TECH
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