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A kind of led epitaxial wafer grown on metal al substrate and its preparation method and application

A technology of LED epitaxial wafers and substrates, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unstable chemical properties of metal Al substrates, affecting the quality of epitaxial film growth, and difficulties in film epitaxy. Effects of quantum efficiency, shortened nucleation time, and excellent thermal conductivity

Active Publication Date: 2016-11-30
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the metal Al substrate is chemically unstable. When the epitaxial temperature is higher than 700 °C, the interface reaction between the epitaxial nitride and the metal substrate will seriously affect the quality of the epitaxial film growth.
Pioneering researcher and well-known scientist Akasaki et al. have tried to apply traditional MOCVD or MBE technology to directly epitaxially grow nitrides on substrate materials with variable chemical properties. difficulty

Method used

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  • A kind of led epitaxial wafer grown on metal al substrate and its preparation method and application
  • A kind of led epitaxial wafer grown on metal al substrate and its preparation method and application
  • A kind of led epitaxial wafer grown on metal al substrate and its preparation method and application

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Effect test

Embodiment 1

[0051] An LED epitaxial wafer grown on a metal Al substrate, which is prepared by the following method:

[0052] 1) Substrate treatment: select metal Al as the substrate, and polish the surface of the Al substrate with diamond slurry, and observe the surface of the substrate with a microscope when there is no scratch, and then use chemical mechanical polishing to polish the substrate. Then, the cleaned substrate was put into deionized water and ultrasonically cleaned at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then washed with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter; after cleaning The substrate was blown dry with dry nitrogen with a purity of 99.9999%; finally, the substrate Al was placed under a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at 450°C for 1 hour to remove pollutants on the substrate surface, and then air cool to room temperature;

...

Embodiment 2

[0067] An LED epitaxial wafer grown on a metal Al substrate, which is prepared by the following method:

[0068] 1) Substrate treatment: select metal Al as the substrate, and polish the surface of the Al substrate with diamond slurry, and observe the surface of the substrate with a microscope when there is no scratch, and then use chemical mechanical polishing to polish the substrate. Then, the cleaned substrate was put into deionized water and ultrasonically cleaned at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then washed with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter; after cleaning The substrate was blown dry with dry nitrogen with a purity of 99.9999% (v%); finally the substrate Al was placed under a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at a high temperature of 500 ° C for 1 hour to remove pollutants on the substrate surface, and then air c...

Embodiment 3

[0083] An LED epitaxial wafer grown on a metal Al substrate, which is prepared by the following method:

[0084] 1) Substrate treatment: select metal Al as the substrate, and polish the surface of the Al substrate with diamond slurry, and observe the surface of the substrate with a microscope when there is no scratch, and then use chemical mechanical polishing to polish the substrate. Then, the cleaned substrate was put into deionized water and ultrasonically cleaned at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then washed with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter; after cleaning The substrate was blown dry with dry nitrogen with a purity of 99.9999%; finally, the substrate Al was placed under a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at a high temperature of 550 ° C for 1 hour to remove pollutants on the substrate surface, and then air cool ...

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Abstract

The invention discloses an LED epitaxial wafer grown on a metal Al substrate, which comprises a metal Al substrate, the (111) crystal plane of the metal Al substrate as the epitaxial plane, and Al grown on the metal Al substrate. 2 o 3 The protective layer, and the crystal epitaxial orientation relationship is GaN(0001) / / Al 2 o 3 (0001) / / Al(111), in Al 2 o 3 U-GaN thin film layer, N-GaN thin film layer, InGaN / GaN multiple quantum well layer, and p-type GaN thin film grown from bottom to top on the protective layer. The invention improves the luminous efficiency of the LED by selecting a suitable crystal orientation and obtaining a high-quality GaN epitaxial thin film on the Al(111) substrate.

Description

technical field [0001] The present invention relates to the technical field of film synthesis by metal-organic chemical vapor deposition, in particular to an LED epitaxial wafer grown on a metal Al substrate and its preparation method and application; it is mainly used in bulk acoustic wave resonators with various dielectric layers , logic circuits, light emitting diodes, photoelectric thin film devices, solar cells, photodiodes, photodetectors, lasers and other fields. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/12H01L33/00
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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