Method for preparing siliconized graphite by vacuum vapor deposition reaction method

A technology of silicified graphite and vapor phase deposition, which is applied in the field of silicified graphite, can solve the problems of easy cracking, peeling, and weak bonding force of SiC layer, and overcome the large amount and consumption of silicon raw materials, good oxidation resistance and wear resistance Effect

Active Publication Date: 2015-10-28
四川海承碳素制品有限公司
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Problems solved by technology

The SiC layer formed by this method is extremely dense, uniform in thickness, and the coating thickness is 0.1-0.3 mm, but the bonding force between the formed SiC and the graphite substrate is weak, and the SiC layer is prone to cracking and peeling off in the rapid cooling and rapid heating environment.

Method used

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Embodiment Construction

[0029] The present invention will be further described in detail below in combination with specific embodiments.

[0030] The method for preparing siliconized graphite by vacuum vapor deposition reaction method of the present invention, its steps are as follows:

[0031] 1) Raw material preparation

[0032] Preparation of carbon material blanks: process and shape carbon material blanks with good thermal stability into carbon products; Strength ≥ 75Mpa; machining allowance of 0.1 ~ 1mm can be reserved during blank processing.

[0033] Siliconization reaction raw material preparation: the mass ratio is Si: SiC: penetration enhancer: accelerator: phenolic resin: water = 85~99: 0.5~5: 0.01~5: 0.01~3: 0.01~1: 0.5~1 The raw materials are mixed and ground evenly to obtain the silicification reaction raw materials;

[0034]2) Preparation of Silicified Graphite: Coat (brush or roll) the siliconized reaction raw material on the surface of the carbon product, put it into a graphite cr...

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Abstract

The invention discloses a method for preparing silicified graphite via a vacuum vapor deposition reaction method. The method comprises the following steps: 1) preparing raw materials for a carbon product and a silicide reaction: taking Si, SiC, a penetration enhancer, an accelerant, phenolic resin and water as the raw materials for the silicide reaction; 2) coating the raw materials for the silicide reaction on the surface of the carbon product, putting into a graphite crucible, standing in a vacuum furnace, then heating in three phases, namely heating to 500 DEG C -700 DEG C in the first phase, heating to 1500 DEG C-1800 DEG C in the second phase and respectively carrying out heat preservation; heating to 1800 DEG C-2400 DEG C in the third phase, treating for 0.5 to 5 hours under the condition of the vacuum degree higher than 0.97 so as to gasify silicon and carry out a vapor deposition reaction between the silicon and the carbon material to obtain the silicified graphite; and 3) carrying out aftertreatment on the silicified graphite. The silicified graphite prepared by using the method has the excellent comprehensive performance of high-temperature resistance, abrasion resistance, corrosion resistance and the like.

Description

technical field [0001] The invention relates to silicified graphite, specifically a method for preparing silicified graphite materials excellent in high temperature resistance, wear resistance, corrosion resistance, thermal shock resistance, etc. by a vacuum vapor deposition reaction method, and belongs to the technical field of chemical materials. Background technique [0002] Silicon Carbide / Graphite Composite Material (SCGC) is also called silicon carbide coated graphite or silicon infiltrated graphite. It is a new type of silicon carbide / graphite composite material composed of silicon carbide, graphite, and free silicon, which is formed by infiltrating silicon or silicon carbide on the surface or deep layer of graphite as the matrix. The thickness of the silicon carbide layer is about 1-3mm, and it is closely combined with the carbon graphite matrix. At the same time, a certain amount of graphite is also distributed in the silicon carbide layer. Siliconized graphite com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50
Inventor 彭达鸿
Owner 四川海承碳素制品有限公司
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