Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating

A technology of organic semiconductors and composite films, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of increased leakage of devices, rough surface of composite films, weakened resistance characteristics of devices, etc. The effect of low surface roughness

Inactive Publication Date: 2014-07-23
FUDAN UNIV
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the semiconductor phase and the ferroelectric phase form a phase-separated structure during the solution film formation process, the surface of the composite film prepared by the ordinary spin-coating process is extremely rough, and its surface roughness is equivalent to the thickness of the film, resulting in device leakage. increase, which weakens the resistive switching characteristics of the device, resulting in a decrease in the yield of the composite resistive switching memory structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating
  • Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating
  • Method for manufacturing organic semiconductor/ferroelectric composite resistance-variable film through temperature-controllable spin coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] This embodiment illustrates that the adjustment of the roughness of the composite structure thin film is realized by adjusting the temperature of the spin coating environment. Proceed as follows:

[0018] 1) Prepare 10ml of tetrahydrofuran solution of P(VDF-TrFE) ferroelectric polymer with a mass concentration of 3.2%.

[0019] 2) Add P3HT to the above solution to prepare a mixed solution with a ratio of P3HT to P(VDF-TrFE) of 1:10.

[0020] 3) At a specific ambient temperature, drop the mixed solution onto a clean glass slide in a temperature control device, and spin-coat at a speed of 700rpm to form a film.

[0021] 4) A total of 3 composite film samples were prepared, and the spin coating ambient temperatures were 20°C, 50°C and 70°C, respectively.

[0022] 5) Observe the surface morphology and roughness characteristics of the formed organic semiconductor / ferroelectric composite film with an atomic force microscope, and determine the influence of spin coating tempe...

Embodiment 2

[0025] This example illustrates the regulation and control of the spin-coating ambient temperature on the resistive properties of the organic semiconductor / ferroelectric composite thin film. Proceed as follows:

[0026] 1) A sandwich structure of metal / organic composite film / metal is prepared on a glass sheet, and the electrode is a silver electrode with a cross structure, and the electrode area is 0.2mm×0.1mm.

[0027] 2) The preparation method of the organic semiconductor / ferroelectric composite structure film is the same as that in Example 1, and the temperatures during spin coating are 20°C and 50°C, respectively.

[0028] 3) Conduct electrical tests to determine the resistance switching characteristics of the device obtained under different ambient temperatures.

[0029] Typical results are attached image 3 shown. image 3 a shows the current-voltage (I-V) characteristic curve of the device with a spin-coating temperature of 20°C. The curve has a symmetrical structur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for manufacturing an organic semiconductor / ferroelectric composite film having a resistance-variable characteristic through a temperature-controllable spin coating technology. Ferroelectric polymers and an organic semiconductor are dissolved in butylene oxide to be prepared into a mixed solution, and at a specific spin coating environment temperature, the surface of a clean substrate is coated with the mixed solution in a dripping mode to form the film through spin coating. Through precisely adjusting and controlling the environment temperature in the spin coating process, the organic semiconductor / ferroelectric composite film which is low in surface roughness and high in resistance-variable performance can be manufactured.

Description

technical field [0001] The invention relates to a method for preparing an organic semiconductor / ferroelectric composite thin film by spin coating with controllable temperature. A tetrahydrofuran solvent is used to dissolve the ferroelectric polymer and an organic semiconductor to form a mixed solution, and the mixed solution is spin-coated on the surface of a substrate by a temperature-controlled spin-coating process to prepare an organic semiconductor / ferroelectric composite resistive thin film. Background technique [0002] Resistive memory has the characteristics of simple structure, fast read and write speed, low manufacturing cost, excellent device scaling performance, and good compatibility with semiconductor processes. It has attracted extensive attention from academia and industry, and is expected to become the direction of future storage technology development. . The organic semiconductor / ferroelectric composite structure is a simple process for preparing resistive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00
CPCH10K71/12
Inventor 朱国栋胡静航张剑驰
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap