Electric potential induced attenuation prevention crystalline silicon battery and preparation method thereof

Abstract

The invention discloses an electric potential induced attenuation prevention crystalline silicon battery. The electric potential induced attenuation prevention crystalline silicon battery comprises an amorphous silicon layer, a silicon-rich silicon nitride layer which has a passivation effect and a nitrogen-rich silicon nitride layer which has an antireflection effect, wherein the amorphous silicon layer, the silicon-rich silicon nitride layer and the nitrogen-rich silicon nitride layer sequentially cover a silicon substrate. According to the electric potential induced attenuation prevention crystalline silicon battery, an antireflecting layer structure of the battery is mainly improved, a layer of compact amorphous silicon is deposited between traditional single-layer or multi-layer silicon nitride and the crystalline silicon substrate by a PECVD method, the compact amorphous silicon layer can prevent erosion of positive ions to PN junctions, and therefore the influence of a PID effect is lowered. The electric potential induced attenuation prevention crystalline silicon battery can be achieved by only making simple modification on a process on existing equipment, and is compatible with an existing process, simple in method and low in cost.

Description

technical field [0001] The invention relates to the field of crystalline silicon solar cells, in particular to a crystalline silicon cell capable of resisting potential-induced attenuation and a preparation method thereof. Background technique [0002] Potential-induced degradation (PID) phenomenon refers to the phenomenon that the output power of solar crystalline silicon modules is attenuated when they work in a humid and hot environment and high voltage for a long time. It is generally believed that the sodium ions in the glass are precipitated in a hot and humid environment, and through the circuit formed by the crystalline silicon battery and packaging materials to the frame of the module under high voltage, the PN junction of the battery is eroded, which is the main cause of the PID phenomenon. In recent years, PID has become one of the important factors for foreign buyers to complain about the quality of domestic modules. In severe cases, it can cause the power of a m...

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Problems solved by technology

[0005] Generally, the density of the silicon nitride anti-reflection film is increased on the battery side, that is, the method of increasing the refractive index is used to block the erosion of positive ions on the PN junction, thereby reducing the influence of the PID effect, but this method requires silicon nitride The refractive index of the silicon nitride is increased to about 2.2. The extinction coefficient of silicon nitride with such a high refractive index will be very high. The silicon nitride film itself will absorb more light, and the light incident on the substrate will decrease, resulting in a decrease in the photogenerated current, resulting in drop in battery efficiency

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