Packaging adhesive film with high PID resistance and preparation method thereof
A packaging film, high resistance technology, applied in the direction of adhesives, film/sheet adhesives, non-polymer adhesive additives, etc., can solve the problem of long lamination time, slow cross-linking speed, increased haze, etc. Problems, to achieve excellent bonding performance, good effect, high optical performance
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Embodiment 1
[0054] The highly PID-resistant encapsulating adhesive film of this embodiment includes an upper adhesive film layer, a barrier layer and a lower adhesive film layer arranged in sequence from top to bottom, at least one of the upper adhesive film layer and the lower adhesive film layer is added with anti-hydrolysis Additives and ion traps.
[0055] The thickness of the adhesive film layer is 300 μm, and the adhesive film layer contains the following components in parts by mass:
[0056]
[0057] The barrier layer has a thickness of 50 μm, specifically an ETFE film.
[0058] The thickness of the lower adhesive film layer is 300 μm, and in parts by mass, the lower adhesive film layer comprises the following components:
[0059]
[0060]
[0061] The preparation method of the high-PID-resistant encapsulating adhesive film of this embodiment includes the following steps: purchase a commercially available transparent ETFE film of 50 μm, and cast the upper and lower adhesi...
Embodiment 2
[0063] The highly PID-resistant encapsulating adhesive film of this embodiment includes an upper adhesive film layer, a barrier layer and a lower adhesive film layer arranged in sequence from top to bottom, at least one of the upper adhesive film layer and the lower adhesive film layer is added with anti-hydrolysis Additives and ion traps.
[0064] The thickness of the adhesive film layer is 300 μm, and the adhesive film layer contains the following components in parts by mass:
[0065]
[0066] The barrier layer has a thickness of 50 μm, specifically an ETFE film.
[0067] The thickness of the lower adhesive film layer is 300 μm, and in parts by mass, the lower adhesive film layer comprises the following components:
[0068]
[0069] The preparation method of the high-PID-resistant encapsulating adhesive film of this embodiment includes the following steps: purchase a commercially available transparent ETFE film of 50 μm, and cast the upper and lower adhesive films acc...
Embodiment 3
[0071] The highly PID-resistant encapsulating adhesive film of this embodiment includes an upper adhesive film layer, a barrier layer and a lower adhesive film layer arranged in sequence from top to bottom, at least one of the upper adhesive film layer and the lower adhesive film layer is added with anti-hydrolysis Additives and ion traps.
[0072] The thickness of the adhesive film layer is 300 μm, and the adhesive film layer contains the following components in parts by mass:
[0073]
[0074]
[0075] The barrier layer has a thickness of 50 μm, specifically an ETFE film.
[0076] The thickness of the lower adhesive film layer is 300 μm, and in parts by mass, the lower adhesive film layer comprises the following components:
[0077]
[0078] The preparation method of the high-PID-resistant encapsulating adhesive film of this embodiment includes the following steps: purchase a commercially available transparent ETFE film of 50 μm, and cast the upper and lower adhesi...
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Abstract
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