Chip preprocessing method of selective epitaxial growth germanium silicon
An epitaxial growth and pretreatment technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as inability to guarantee wafer cleanliness, affect device characteristics, germanium-silicon dislocation stress, etc., and achieve good characteristics and process Simple, quality-assured results
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[0028] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0029] See 2 to image 3 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during a...
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