Method for fast preparing sapphire pattern substrate through nanoimprint technology

Abstract

The invention discloses a method for fast preparing a sapphire pattern substrate through the nanoimprint technology. The method comprises the following steps: a nanoimprint template is prepared through two methods including the hard template method and the soft template method, an epitaxial layer is grown on a clean sapphire substrate, SiO2 or Cr is evaporated and plated to obtain a target substrate, and then the surface of the target substrate is coated with moderate hot-pressing adhesive, imprinting is performed on the target substrate coated with uniform adhesive and the nanoimprint template, a photoresist surface pattern is transferred to the surface of the target substrate, and after a series of post processes, the required sapphire pattern substrate is obtained. The method of the invention has the following main advantages that the problem of the traditional lithography in the feature size reduction process can be solved, the pattern substrate having the nanometer feature size is prepared, and the size of the pattern substrate is less than 500nm. The method of the invention has the following advantages that the bran-new NPSS substrate industrialization technology can be realized, and at the same time, the substrate machining cost and epitaxy production cost can be reduced, and the LED lighting chip production cost is reduced by 15%.

Description

technical field [0001] The invention relates to a method for preparing a sapphire pattern substrate, in particular to a method for preparing a sapphire pattern substrate with real nanometer size characteristics by adopting nano-imprinting technology. Background technique [0002] Sapphire substrate is currently the most important substrate for manufacturing GaN-based LEDs such as blue light, green light and white light. Compared with other substrates (such as SiC, GaN, etc.), it has mature manufacturing technology, low cost, good stability, and no absorption. Visible light and other advantages are currently the most widely used substrates in the LED industry. However, the sapphire substrate has its major defects: there is a large lattice mismatch and thermal stress mismatch with epitaxial materials such as GaN, which leads to defects in the epitaxial wafer, which affects the internal quantum efficiency of the LED and the performance and quality of the chip . Lattice mismat...

AI Technical Summary

Problems solved by technology

However, the sapphire substrate has its major defects: there is a large lattice mismatch and thermal stress mismatch with epitaxial materials such as GaN, which leads to defects in the epitaxial wafer, which affects the internal quantum efficiency of the LED and the performance and quality of the chip

However, due to the limitation of the processing method, the conventional photolithography process can only process the PSS substrate with a characteristic size of micron, and the obtained substrate pattern is not uniform, which greatly limits the design and improvement of the substrate pattern. limit

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