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High-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and preparation method thereof

A technology of polarization strength and bismuth ferrite, applied in circuits, electrical components, electric solid devices, etc., can solve the difficulty of preparing bismuth ferrite thin films, easy to generate oxygen vacancy ions, and difficult to prepare pure phase thin films and other problems, to achieve the effect of facilitating industrialization, good pressure resistance, and good compactness

Active Publication Date: 2014-06-04
欧阳俊
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many problems in the preparation of bismuth ferrite thin films, for example, due to the easy generation of oxygen vacancies and Fe 3+ Due to problems such as ion price change, it is difficult to produce a pure-phase, low-leakage film
Therefore, it is even more difficult to prepare a bismuth ferrite thin film with high withstand voltage, low leakage current and high polarization strength.

Method used

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  • High-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and preparation method thereof
  • High-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and preparation method thereof
  • High-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A method for preparing a bismuth ferrite thin film with high withstand voltage, low electric leakage and high polarization strength, comprising the following steps:

[0037] (a) Treatment of the substrate

[0038] Cleaning and mounting: LaAlO with (111) orientation 3 For a single crystal substrate, the substrate is ultrasonically cleaned with acetone and absolute ethanol in sequence, rinsed with deionized water, dried with high-purity nitrogen, fixed on the sample tray, and loaded into the sample tray of the vacuum coating chamber. On the tray rack, close the vacuum chamber, pump the system with a mechanical pump to achieve a low vacuum ~ 10 -1 Pa, and then evacuated to ~10 by molecular pump -4 Pa.

[0039] Heating: Introduce argon gas into the system, keep the air pressure at 1.2-1.4Pa, and then heat the substrate to a temperature of 500-600°C.

[0040] (b) Preparation of conductive oxide thin film bottom electrode

[0041] Perovskite LaNiO 3 The target is comple...

Embodiment 2

[0048] The difference between this example and Example 1 is that (111) oriented SrTiO is used in step (a) 3 single crystal substrate. Other steps and parameters are the same as in Example 1. The obtained BiFeO in this embodiment 3 The XRD test results of the film are as follows image 3 As shown, BiFeO 3 The thin film has a rhombohedral phase (111) preferred orientation. After performance testing, the ferroelectric properties of the obtained thin film are significantly improved, and the pressure resistance is significantly improved. The hysteresis loop is as follows: Figure 4 shown.

Embodiment 3

[0050] A method for preparing a bismuth ferrite thin film with high withstand voltage, low electric leakage and high polarization strength, comprising the following steps:

[0051] (a) Treatment of the substrate

[0052] Cleaning and mounting: LaAlO with (111) orientation 3 For a single crystal substrate, the substrate is ultrasonically cleaned with acetone and absolute ethanol in sequence, rinsed with deionized water, dried with high-purity nitrogen, fixed on the sample tray, and loaded into the sample tray of the vacuum coating chamber. On the tray rack, close the vacuum chamber, pump the system with a mechanical pump to achieve a low vacuum ~ 10 -1 Pa, and then evacuated to ~10 by molecular pump -4 Pa.

[0053] Heating: Introduce argon gas into the system, keep the air pressure at 2Pa, and then heat the substrate to reach a temperature of 600-700°C.

[0054] (b) Preparation of conductive oxide thin film bottom electrode

[0055] Perovskite LaNiO 3 The target is comple...

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Abstract

The invention relates to a high-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film and a preparation method thereof. The high-voltage-withstanding, low-electric-leakage and high-polarization strength bismuth ferrite thin film comprises a base body, a bottom electrode, a bismuth ferrite dielectric layer and a top electrode, a mono-crystal oxide semiconductor substrate with lattice constant close to that of the bismuth ferrite is used as the base body, the bottom electrode is a conductive oxide thin film, and the top electrode is a metal thin film point electrode. The bottom electrode is deposited on the base body in a coaxial sputtering mode, then the bismuth ferrite dielectric layer is deposited on the bottom electrode in an off-axis sputtering mode, and at last the top electrode is deposited on the bismuth ferrite dielectric layer so that the thin film can be prepared. The prepared BiFeO3 thin film is in a rhombohedral shape and achieves height orientation, a ferroelectric hysteresis loop with good rectangularity is achieved under the room temperature, the intensity of polarization is high, the intensity of magnetization can reach 100 -110 micro coulombs / cm<2>, the voltage withstanding performance is good, and the maximum withstand voltage can achieve 50 v.

Description

technical field [0001] The invention relates to a magnetoelectric thin film material and its preparation, in particular to a bismuth ferrite thin film with high withstand voltage, low electric leakage and high polarization strength and its preparation method. Background technique [0002] Bismuth ferrite (BiFeO 3 ) is a multiferroic material with both ferroelectricity and antiferromagnetism at room temperature, and in theory, the remnant polarization of its film can be 2-3 times that of lead-containing materials widely used now, so iron Bismuth oxide materials have broad application prospects in memory, high-capacitance and high-inductance integrated electronic components, and spintronic devices, and its research has increasingly attracted people's attention. [0003] Bismuth ferrite is the only multiferroic material found so far with both ferroelectric Curie temperature (Tc=1143K) and magnetic ordering temperature (Tn=643K) above room temperature. The preparation of bismu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L21/02
Inventor 欧阳俊康立敏
Owner 欧阳俊
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