Fin field effect transistor and manufacturing method thereof

Abstract

The invention relates to a fin type field effect transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: forming an insulation layer at a semiconductor substrate; carrying out graphic processing on the insulation layer to form a plurality of trenches exposed out of the semiconductor substrate; filling the trenches with first semiconductor materials to form first semi-conductor layers; carrying out anti-channel doping ion diffusion material doping on the first semi-conductor layers; carrying out channel doping on the first semi-conductor layers; filling the trenches with second semi-conductor materials to form second semi-conductor layers; removing the insulation layer and exposing fin including the first semi-conductor layers and the second semi-conductor layers; and forming gate structure on the fins. The fin type field effect transistor includes a plurality of arranged on the semiconductor substrate and gate structures formed on the fins; the fins include first semiconductor layers and the second semiconductor layers, wherein the first semiconductor layers are doped with channel doping ions and anti-channel doping ion diffusion materials and the second semi-conductor layers are non-doping semi-conductor layers. According to the invention, the electronic mobility can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a manufacturing method thereof. Background technique [0002] In order to keep up with the pace of Moore's Law, people have to continue to shrink the feature size of MOSFET transistors. Doing so can bring benefits such as increasing chip density and improving the switching speed of MOSFETs. As the channel length of the device is shortened, the distance between the drain and the source is also shortened, so that the control ability of the gate to the channel becomes worse, and it becomes more and more difficult for the gate voltage to pinch off the channel. The larger the , the more likely the so-called short-channel effects (SCE: short-channel effects) will occur. [0003] For this reason, planar CMOS transistors are gradually transitioning to a three-dimensional (3D) Fin Field Effect Transistor (Fin Field Effect Transistor, FinFET) d...

AI Technical Summary

Problems solved by technology

[0005] However, figure 1 The prior art FinFET shown has a low electron mobility

[0006] In the Chinese patent whose publication number is CN100521116C discloses a kind of fin field effect transistor, but does not solve above-mentioned technical problem

Images