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GaN base LED transparent electrode graphical preparation method

A transparent electrode and patterning technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as unstable corrosion process, difficulty and danger of production personnel, complex mask process, etc., to reduce the cost and time-consuming of lithography , Reduce the harm to the human body, and improve the efficiency of light extraction

Inactive Publication Date: 2014-03-12
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this process is costly and time-consuming in lithography and etching, and the etching process is unstable; the Chinese invention application with application number 200510073285.2 proposes a high-brightness light-emitting diode with surface patterning and microstructure, using nano-pressure Printing technology prepares organic material films with various patterns on the light-emitting surface, and indirectly forms a microstructure on the surface of the LED that is conducive to the escape of light emitted by the active area, so that the interface area of ​​the light in the exit medium is increased, and the increased surface appears. It is a small area with a large number of disordered directions, causing the light to be emitted randomly at the interface between the active area and the medium to a certain extent
The nanoimprinting equipment used in this invention is expensive, and the mask making process is complicated
[0005] The above related reports show that after various patterning on the transparent electrode, the external quantum efficiency of GaN-based LEDs is greatly improved, but the patterning process is not uniform enough, which often causes high voltage; and when patterning, metal or photolithography is usually used. Plastic is used as a mask, but the cost of metal and photolithography is high, and photoresist is highly toxic, which poses certain difficulties and dangers to production personnel.

Method used

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  • GaN base LED transparent electrode graphical preparation method
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  • GaN base LED transparent electrode graphical preparation method

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Experimental program
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Effect test

Embodiment 1

[0032] Referring to the accompanying drawings, the method for preparing a patterned transparent electrode of a GaN-based LED in this embodiment, the steps include:

[0033] 1. Evaporate ITO transparent electrodes on the GaN-based epitaxial layer by electron beam evaporation: the power of the electron beam bombardment source is 1KW, the substrate temperature is 300°C, and the vacuum degree is 2×10 -5 Torr; the thickness of the evaporated transparent electrode is 1000 ?.

[0034] 2. Deposit a layer of ultrathin SiO on the transparent electrode by PECVD 2 Layer: growth temperature 200°C, deposited SiO 2 The thickness is 10 ?, so that during annealing, SiO 2 The chemical bonds between the molecules are broken to form a crystal pattern.

[0035] 3. Thin SiO 2 Layered GaN-based epitaxial wafers were placed in an annealing furnace at 250 °C under a nitrogen atmosphere for 5 minutes, and the SiO 2 A rhomboid β-phospho-quartz crystal pattern is generated.

[0036] 4. Use the diam...

Embodiment 2

[0040] 1. Evaporate ITO transparent electrodes on the GaN-based epitaxial layer by electron beam evaporation: the power of the electron beam bombardment source is 1KW, the substrate temperature is 300°C, and the vacuum degree is 2×10 -5 Torr; the thickness of the evaporated transparent electrode is 1000 ?.

[0041] 2. Deposit a layer of ultrathin SiO on the transparent electrode by PECVD 2 Layer: growth temperature 200°C, deposited SiO 2 The thickness is 50 ?, so that during annealing, SiO 2 The chemical bonds between the molecules are broken to form a crystal pattern.

[0042] 3. Thin SiO 2 Layered GaN-based epitaxial wafers were placed in an annealing furnace at 300 °C under a nitrogen atmosphere for 6 minutes, and the SiO 2 A trapezoidal γ-phospho-quartz crystal pattern is generated.

[0043] 4. Use the trapezoidal γ-phosphorous quartz crystal as the mask of the transparent electrode, and use ICP to etch the exposed transparent electrode; 2 and BCl 3 is the main gas ...

Embodiment 3

[0047] 1. Evaporate ZnO transparent electrodes on the GaN-based epitaxial layer by electron beam evaporation: the power of the electron beam bombardment source is 1KW, the substrate temperature is 300°C, and the vacuum degree is 2×10 -5 Torr; the thickness of the evaporated transparent electrode is 1500 ?.

[0048] 2. Deposit a layer of ultrathin SiO on the transparent electrode by PECVD 2 Layer: growth temperature 200°C, deposited SiO 2 The thickness is 100 ?, so that during annealing, SiO 2 The chemical bonds between the molecules are broken to form a crystal pattern.

[0049] 3. Thin SiO 2Layered GaN-based epitaxial wafers were placed in an annealing furnace at 300 °C under a nitrogen atmosphere for 7 minutes, and the SiO 2 A rhombohedral γ-phospho-quartz crystallographic pattern is generated.

[0050] 4. Use rhombic γ-phosphorous quartz crystal as the mask of the transparent electrode, and use ICP to etch the exposed transparent electrode; 2 and BCl 3 is the main ga...

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Abstract

The invention provides a GaN base LED transparent electrode graphical preparation method; the method comprises the steps of: vapor plating an ITO, ZnO or single layer graphene transparent electrode on a GaN base epitaxial layer; depositing a thin SiO2 layer on the transparent electrode; employing a crystallization graph formed by annealing of the SiO2 under different temperatures to serve as a mask layer; employing dry etching to etch exposed transparent electrode; using HF solution to remove the SiO2 crystallization graph so as to obtain a graphical transparent electrode. The method not only employs the graphical transparent electrode to improve light extraction efficiency in preparation, but also reduces cost and work time of a conventional lithography mask layer technology.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, specifically relates to the technical field of GaN-based light-emitting diodes, and particularly relates to a technical method for engraving patterns on transparent electrodes. Background technique [0002] As a new energy-saving product, the application range of LED products is more and more extensive, and the application field is constantly expanding, especially in lighting, display and other aspects. Subsequently, the most concerned in the LED market is how to brighten the effect. [0003] In the preparation of LED light-emitting diode chips, in order to improve the light extraction efficiency, methods such as vertical structure, flip-chip, surface roughening, and invisible cutting are usually used on traditional LEDs. There are also a large number of articles and patents that have been elaborated, but each Both methods have unstable limitations in process and equipment, o...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/38
CPCH01L33/0075
Inventor 肖志国李倩影武胜利孙英博薛念亮李浩然
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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