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Method capable of improving conversion efficiency of crystalline silicon solar cell

A solar cell and conversion efficiency technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult feasibility and complex process, and achieve the effect of good feasibility, simple and easy process, and good effect.

Active Publication Date: 2014-02-19
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional crystalline silicon solar cells use rare earth ions to realize light wave conversion, the process is complex and the feasibility is difficult

Method used

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  • Method capable of improving conversion efficiency of crystalline silicon solar cell
  • Method capable of improving conversion efficiency of crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Select 156 single crystal silicon wafers, through texturing of silicon wafers (existing process), diffusion PN junction (existing process), etching and cleaning (existing process), PECVD Si plating 3 N 4 Anti-reflection coating (existing technology), film thickness 75nm, refractive index 2.0. Subsequent rare earth Eu 3+ Ion implantation, implantation parameters: implantation energy 70KeV, implantation dose 2×10 15 cm -2 . After the implantation is completed, the silicon wafer is annealed in a high-temperature furnace at 800 °C for 60 min in a nitrogen atmosphere, and then taken out and cooled to room temperature. Fluorescence spectrum test is carried out on the sample, and the attached figure 1 excitation and emission spectra. Finally, the samples are made of electrodes by screen printing (existing process) and sintered (existing process) to form a finished crystalline silicon battery with light wave conversion characteristics, and the electrical performance chara...

Embodiment 2

[0024] Example 2: Select 156 polycrystalline silicon wafers, through texturing the silicon wafers, diffusing to make PN junctions, etching and cleaning, and PECVD Si plating 3 N 4 Anti-reflection coating with a film thickness of 80 nm and a refractive index of 2.05. Subsequent rare earth Eu 3+ Ion implantation, implantation parameters: implantation energy 80KeV, implantation dose 1×10 15 cm -2 . After the implantation is completed, the silicon wafer is annealed in a high-temperature furnace at 800 °C for 30 min in a nitrogen atmosphere, and then taken out and cooled to room temperature. Fluorescence spectrum test is carried out on the sample, and the attached figure 1 excitation and emission spectra. Finally, the samples were screen-printed to form electrodes and sintered to form a finished crystalline silicon cell with light-wave conversion characteristics, and the electrical performance characteristics of the battery were tested. Compared with the existing ordinary cry...

Embodiment 3

[0025] Example 3: Select 156 single crystal silicon wafers, through texturing the silicon wafers, making PN junctions by diffusion, etching and cleaning, and Si plating by PECVD 3 N 4 Anti-reflection coating with a film thickness of 90 nm and a refractive index of 2.1. Subsequent rare earth Tb in the anti-reflection coating 3+ Ion implantation, implantation parameters: implantation energy 100KeV, implantation dose 1×10 15 cm -2 . After the implantation is completed, the silicon wafer is annealed in a high-temperature furnace at 1000 °C for 30 min in a nitrogen atmosphere, and then taken out and cooled to room temperature. Fluorescence spectrum test is carried out on the sample, and the attached figure 2 excitation and emission spectra. Finally, the samples were screen-printed to form electrodes and sintered to form a finished crystalline silicon cell with light-wave conversion characteristics, and the electrical performance characteristics of the battery were tested. Co...

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Abstract

The invention discloses a method capable of improving conversion efficiency of a crystalline silicon solar cell. The method comprises steps that: (1), texturing on a silicon wafer is carried out, a PN junction is prepared through expansion, etching and cleaning are carried out, PECVD plating on an anti-reflective film is carried out; (2), rare earth ion implantation into the anti-reflective film is carried out; (3), after rare earth ion implantation, the silicon wafer is annealed in a high temperature furnace in a nitrogen atmosphere and is taken out to cool to a room temperature; and (4), screen printing of the silicon wafer is carried out to form an electrode, and a finished product of the crystalline silicon solar cell having light wave conversion characteristics is formed through sintering. According to the method, rare earth ions are doped on the anti-reflective film by utilizing the ion implantation technology, so the anti-reflective film has the light conversion characteristics, a photon utilization rate of the crystalline silicon solar cell in a high-energy ultraviolet area is improved, and thereby conversion efficiency of the cell is improved; the technology utilized in the method is simple and easy and can be linked with a manufacturing process of a cell in the prior art, reconstruction for equipment in the prior art is not needed, cost is saved, batch production is easily realized through the ion implantation technology, and the method has good feasibility.

Description

technical field [0001] The invention relates to the technical field of production of crystalline silicon solar cells, in particular to a method capable of improving the conversion efficiency of crystalline silicon solar cells. Background technique [0002] When the air quality is AM 1.5, the solar power received by the ground is 1000 W / m 2 Under the conditions of , the spectral distribution of sunlight on the earth's land surface extends from 0.3 μm in the ultraviolet to 2.5 μm in the infrared. Since the band gap of silicon is 1.1 eV (λ=1100 nm), generally speaking, the wavelength of light that responds well to silicon solar cells should be around 1.1 eV. Most of the ultraviolet photons above the forbidden band width are converted into lattice vibrations of silicon and emitted in the form of heat energy, while photons below the forbidden band width cannot be absorbed by semiconductor silicon to generate electron-hole pairs, so it is currently possible to The spectral range...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02168Y02E10/50Y02P70/50
Inventor 陈金灯董方吕绍杰
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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