Single particle injection method and single particle injection equipment

An injection device, single particle technology, used in the field of storage

Pending Publication Date: 2022-05-17
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this stage, natural conditions such as cosmic rays are usually used to achieve single-particle injection to induce SEU. Currently, artificial single-particle injection is still in the exploratory stage.

Method used

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  • Single particle injection method and single particle injection equipment
  • Single particle injection method and single particle injection equipment
  • Single particle injection method and single particle injection equipment

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Embodiment Construction

[0027] In order to make the purpose, features and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The implementation manner is only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0028] Those skilled in the art can understand that terms such as "first" and "second" in this application are only used to distinguish different devices, modules or parameters, etc., neither represent any specific technical meaning, nor represent the inevitable relationship between them. logical order.

[0029] Single-Event Upsets (S...

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Abstract

The invention discloses a single-particle injection method and single-particle injection equipment, and relates to the field of storage, the single-particle injection method is suitable for the single-particle injection equipment, the single-particle injection equipment structurally comprises a host and at least one single-particle injection device, and the single-particle injection method comprises the steps that the host receives a starting instruction, the method comprises the following steps: starting a single particle injection device, transmitting a starting instruction to the single particle injection device, responding to the starting instruction, generating a field effect by at least one single particle injection device, transmitting the field effect to a receiving target, responding to the field effect, and converting a potential state of the receiving target. According to the single-particle injection method and the single-particle injection equipment provided by the embodiment of the invention, the field effect is released and transmitted to the receiving target through the single-particle injection device, and the conversion of the high and low states of the potential state of the semiconductor device of the receiving target is induced through the field effect. And field effect release, intensity and period can be controlled according to requirements so as to realize artificial single particle injection.

Description

technical field [0001] Embodiments of the present invention relate to the field of storage, and relate to a single particle injection method and single particle injection equipment. Background technique [0002] Single-Event Upsets (SEU, Single-Event Upsets) refer to the phenomenon that a single high-energy particle in the universe enters the sensitive area of ​​a semiconductor device, causing the logic state of the device to be reversed. In addition, due to the complex space environment, including light field effects, magnetic field effects, electric field effects and thermal field effects, these field effects have an impact on complementary metal-oxide-semiconductor (CMOS, Complementary Metal-Oxide-Semiconductor) electronic components in computers , resulting in performance degradation of semiconductor devices and loss of stored data. [0003] In the research process of SEU, it is found that based on the influence of SEU on electronic components, especially non-volatile m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 金辉王碧赵巍胜王昭昊
Owner BEIHANG UNIV
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