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Production method of tantalum target and tantalum target component

A manufacturing method and technology of tantalum target materials, which are applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as uneven crystal orientation of cross-section

Active Publication Date: 2014-02-12
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

[0007] The problem to be solved by the present invention is that the crystal orientation of the internal texture of the tantalum target obtained by the conventional forging and rolling production process is mainly (111), and there is a phenomenon of uneven crystal orientation on the cross section

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  • Production method of tantalum target and tantalum target component
  • Production method of tantalum target and tantalum target component

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Embodiment Construction

[0056] The inventors found that PVD is usually carried out by magnetron sputtering. The so-called magnetron sputtering refers to that the plasma generated by the rare gas bombards the surface of the cathode sputtering target under the interaction of the electric field and the magnetic field, so that the target Molecules, atoms, and electrons on the surface are sputtered out, and the sputtered particles have a certain kinetic energy, and shoot to the surface of the substrate in a certain direction, and deposit on the surface of the substrate to form a coating. In the process of coating by magnetron sputtering, the position of the tantalum target is between the magnetron device and the atmosphere of the sputtering chamber, and the crystal orientation can affect the uniformity and resistivity of the tantalum film obtained in the sputtering process. Moreover, the uniformity of the internal grain size of the tantalum target and the size of the internal grain size can affect the coat...

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Abstract

The invention provides a production method of a tantalum target and a tantalum target component. The production method of a tantalum target comprises the following steps of providing a tantalum ingot; forging the tantalum ingot to form a first tantalum target blank; rolling the first tantalum target blank to form a second tantalum target blank; performing first heat treatment on the second tantalum target blank to form the tantalum target, wherein the first heat treatment is divided into three stages: the temperature of the first stage of heat treatment is 550-750 DEG C, and the temperature is maintained for 30-90 minutes; the temperature of the second stage of heat treatment is 750-950 DEG C, and the temperature is maintained for 30-90 minutes; the temperature of the third stage of heat treatment is 950-1,200 DEG C, and the temperature is maintained for 30-90 minutes. By adopting the technical scheme, the main crystal orientation of the obtained tantalum target is (100), and the crystal orientation on the cross section is uniform; moreover, the tantalum target with fine grain and uniform internal organization also can be obtained.

Description

technical field [0001] The invention relates to the field of target processing, in particular to a method for manufacturing a tantalum target and a tantalum target assembly. Background technique [0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships , chemical industry, etc. Metal target components used in PVD are one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. [0003] The metal target component is composed of a metal target that meets the sputtering performance and a back plate with a certain strength. The back plate can play a supporting role when the metal target assembly is assembled to the sputtering base station, and has the effect of conducting heat. With...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14C22F1/18C21D8/00
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽陈勇军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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