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Nitrogen and phosphorus zinc oxide thin film, preparation method thereof and thin film transistor

A nitrogen-phosphorus-zinc-zinc thin-film technology is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., and can solve the problems of poor device stability, low carrier mobility, and thin-film transistor stability. Achieve the effect of eliminating oxygen vacancies and reducing potential barriers

Active Publication Date: 2014-02-05
SHENZHEN DANBANG INVESTMENT GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in typical a-IGZO, the random distribution of a large number of positive ions forms a scattering mechanism for electrons, resulting in relatively low carrier mobility.
And because there are a large number of oxygen vacancies in the a-IGZO thin film, under the conditions of light and negative bias, the existence of donor oxygen vacancies in the band gap will lead to poor stability of the device, so the thin film transistor has a stable question

Method used

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  • Nitrogen and phosphorus zinc oxide thin film, preparation method thereof and thin film transistor

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Experimental program
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Effect test

Embodiment 1

[0022] The ZnO target, P 2 o 5 target and Zn 3 N 2 Installed in three different target positions for simultaneous sputtering, the coating speed is controlled by adjusting the sputtering power of different target positions, so that ZnO, P 2 o 5 The sputtering coating speed ratio of ZnN and ZnN is 1:1:12, and the corresponding atomic ratio is about Zn:P:N=13:2:12.

[0023] ZnOPN adopts radio frequency magnetron sputtering, the distance between the target and the substrate is 60mm, the radio frequency used is 13.56MHz, and the mixed gas of high-purity nitrogen and oxygen is used as the sputtering gas (reactive atmosphere), and the gas ratio is passed through the gas flow meter control. The background vacuum of the sputtering chamber is less than 1×10 -7 Torr, in order to prevent contamination, pre-sputtering was performed for 10 min first, the substrate temperature was kept at room temperature 25°C during sample growth, the flow rate of oxygen was 5 sccm, and the flow rate ...

Embodiment 2

[0036] Two kinds of powder ZnO, P 2 o 5 Mix evenly according to the molar ratio of 12:1, the obtained target atomic ratio Zn:P=12:2, and the rest is oxygen.

[0037] ZnOPN adopts radio frequency magnetron sputtering, the distance between the target and the substrate is 60mm, the radio frequency used is 13.56MHz, and the mixed gas of high purity nitrogen and oxygen is used as the sputtering gas, and the gas ratio is controlled by a gas flow meter. The background vacuum of the sputtering chamber is less than 1×10 -7 Torr, pre-sputtering 10min. During the sample growth, the substrate temperature was kept at room temperature 25° C., the oxygen flow rate was 2 sccm, and the nitrogen flow rate was 100 sccm. At 1Pa pressure and 2.0W / cm 2 The sputtering coating is completed under the power density.

[0038] The element content of the prepared nitrogen, phosphorus, and oxyzinc films was determined by X-ray electron spectroscopy (XPS), and the zinc content was 61%, the phosphorus c...

Embodiment 3

[0041] The ZnO target, Zn 3 P 2 target and Zn 3 N 2 The targets are respectively installed in three different target positions for simultaneous sputtering, and the coating speed is controlled by adjusting the sputtering power of different target positions, so that ZnO, Zn 3 P 2 target and Zn 3 N 2 The sputter coating speed ratio of the target is 10:1:2, and the corresponding atomic ratio is about Zn:P:N=15:2:2.

[0042] ZnOPN uses radio frequency magnetron sputtering, the distance between each target and the substrate is still 60mm, the radio frequency used is 13.56MHz, and the mixed gas of high purity nitrogen and oxygen is used as the sputtering gas, and the gas ratio is controlled by a gas flow meter. The background vacuum of the sputtering chamber is less than 1×10 -7 Torr, pre-sputtering 10min. During the sample growth, the substrate temperature was kept at room temperature 25° C., the flow rate of oxygen was 10 sccm, the flow rate of nitrogen gas was 50 sccm, and...

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Abstract

The invention discloses a nitrogen and phosphorus zinc oxide thin film, a preparation method thereof and a thin film transistor. The nitrogen and phosphorus zinc oxide thin film is composed of ZnxPyO1-x-y-zNz, wherein x is larger than or equal to 55% and smaller than or equal to 65%, y is larger than or equal to 1% and smaller than or equal to 10%, and z is larger than or equal to 10% and smaller than or equal to 22%, and the percentage sum of the number of atoms of each atom is 100%. The nitrogen and phosphorus zinc oxide thin film is deposited through ion sputtering, and the thin film transistor made of given thin film materials has high carrier mobility and stability.

Description

technical field [0001] The invention relates to the preparation of a semiconductor thin film, in particular to a nitrogen, phosphorus, oxygen and zinc thin film, a preparation method thereof and a thin film transistor. Background technique [0002] In the past ten years, the liquid crystal display device with silicon TFT as the driving unit has achieved rapid development due to its advantages of small size, light weight and high quality, and has become the mainstream information display terminal. However, with the improvement of people's performance requirements for display device resolution, response speed, and stability, TFTs with silicon materials as the active layer have exposed a series of problems. (generally less than 0.5cm 2 / (V s), high-resolution display cannot be realized; the production process of low-temperature polysilicon (LTPS) TFT technology is complicated, the investment in equipment is high, and the panel faces difficult problems such as poor uniformity, ...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L21/203H01L29/786
CPCC23C14/3464H01L21/02631H01L29/26H01L29/66742
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP
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