Traveling wave electrode gradual change coupling ridge waveguide InP double-heterojunction photo transistor

Abstract

The invention discloses a traveling wave electrode gradual change coupling ridge waveguide InP double-heterojunction photo transistor. A double-heterojunction structure is adopted, the traveling wave electrode gradual change coupling ridge waveguide InP double-heterojunction photo transistor comprises an (e-b) heterojunction which is composed of an InP emitter region and an InGaAsP base region and a (b-c) heterojunction which is composed of an InGaAsP base region and an InGaAsP collector region, and a traditional heterojunction photo transistor e-b junction single-heterojunction structure is replaced. The InGaAsP base region with high doping concentration is used as a photo-absorption layer of the double-heterojunction photo transistor. A gradual change coupling ridge waveguide structure which is formed by the InGaAsP base region, the InGaAsP collector region and an InGaAsP secondary collector region is adopted, so that probed light is detected and absorbed by a side edge, and the mode that traditional HPT light is in vertical incidence from the top end is replaced. The light transmission direction is perpendicular to the carrier transportation direction, and light absorption efficiency and working speed can be respectively optimized. A traveling wave electrode which is formed by an emitter electrode and a collector electrode is arranged, the distribution effect of a traditional electrode in the transmitting process of high-frequency signals can be effectively reduced, the influence of stray capacitance on high-speed transmission is decreased, and the working speed of the device is further increased.

Description

technical field [0001] The invention discloses an InP double heterojunction phototransistor (DHPT) with a traveling-wave electrode gradient coupling ridge waveguide, in particular to a traveling-wave electrode gradient coupling ridge waveguide phototransistor, which is a high-speed and high-responsive optoelectronic semiconductor device that can solve The contradiction between light absorption efficiency and operating speed of conventional heterojunction phototransistors (HPTs). Background technique [0002] In the microwave optical communication system, new applications such as high-speed detection and absorption of light, high-speed frequency mixing, signal locking and up-and-down conversion have higher and higher requirements on the optical receiver (Receiver). Satisfy the work of signal mixing and so on. In recent years, the rapid development of HPT detectors integrates the functions of light detection and electrical amplification, and has become a focus of research on ...

AI Technical Summary

Problems solved by technology

In this structure of HPT, the photogenerated carriers (including electrons and holes) are concentrated in the depletion region and the collector region, and the mobility of the holes is low, and their slow transport in the collector region severely limits The photoelectric response speed of the device, there is a contradiction between the absorption efficiency and the working speed

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