Protection film for high-power concentrating photovoltaic system receiver and production method thereof

Abstract

The invention discloses a protection film for a high-power concentrating photovoltaic system receiver. The protection film is an Al2O3 film and is arranged on the outer layer of the receiver by the atomic layer deposition technology. The receiver comprises a copper-coated ceramic panel, a solar cell, a Shaw Schottky diode, gold threads and the like. The protection film coats on the outer surface of all components contacting with the air. The Al2O3 film is produced by the ALD (atomic layer deposition) technology is arranged on the upper surface of the receiver and coats on components and circuits on the surface of the receiver. According to the protection film, effects of insulation, water proofing, oxidation resistance and thermal conductivity can be achieved by adjusting parameters of different precursor acting time, air pressure, thickness and the like during Al2O3 film production, and the protection film of the receiver is an ideal one.

Description

technical field [0001] The invention belongs to the technical field of solar energy manufacturing, and in particular relates to a protective film for a receiver in a high-power concentrating photovoltaic system and a preparation method thereof. Background technique [0002] With the rapid improvement of the efficiency of GaAs tandem solar cells, its ground application prospects have attracted much attention. The high-power concentrated photovoltaic system is the basis for the large-scale ground application of GaAs tandem solar cells. Converging sunlight to the surface of GaAs tandem solar cells through lenses can effectively reduce the consumption of GaAs tandem solar cell materials per unit installed capacity of the system, and at the same time improve the photoelectric conversion efficiency of this type of solar cell to a certain extent. At present, the photoelectric conversion efficiency of GaAs tandem solar cells under high concentration conditions can reach 44%, the ef...

AI Technical Summary

Problems solved by technology

[0004] Silicone protective film is usually processed by manual coating. This method has the advantage of low cost, but it is difficult to avoid residual air on the edge of the receiver surface and the formation of air bubbles.

During the working process of the receiver, these air bubbles are easy to heat and expand, which will cause mechanical stress and cause damage to the receiver

In addition, there are problems in the thickness uniformity and process repeatability of manual coating of silica gel, and it will also increase the difficulty of repairing receiver failures

[0005] The oxide film is prepared by physical sputtering as the receiver protective film. Due to the limitation of the physical sputtering process principle, it is difficult to form an oxide film with uniform thickness on the surface of the receiver loaded with uneven components.

On the one hand, it is difficult to control the uniformity and thickness of the film at the scale of the atomic layer because of the thin deposition by physical sputtering; on the other hand, the growth rate and nucleation mechanism of the protective film are different due to the different surface properties of the material itself.

In addition, the physical sputtering method is easy to form sputtering source material accumulation on the side of the component due to the occlusion of the receiver surface components, while the protective film cannot be well covered at the component occlusion

Therefore, the protective film prepared by physical sputtering method has certain defects

Images