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Preparation method of aluminum-doped zinc oxide (AZO) transparent conducting film

A technology of transparent conductive film and aluminum-doped zinc oxide, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of poor process stability and high cost of AZO process

Inactive Publication Date: 2014-01-22
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the disadvantages of high cost and poor process stability of the existing AZO preparation process, and provide a preparation method for AZO transparent conductive film

Method used

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  • Preparation method of aluminum-doped zinc oxide (AZO) transparent conducting film
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  • Preparation method of aluminum-doped zinc oxide (AZO) transparent conducting film

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Using Al 2 o 3 The hot-pressed AZO ceramic target with a doping amount of 2% is a sputtering target, the target size is Φ75×5mm, the deposition atmosphere is a hydrogen atmosphere, the sputtering power is 80W, and the distance between the target and the base is 160mm. The AZO transparent conductive film is prepared Specific steps are as follows:

[0034] (1) use aqua regia (V HCl :V HNO3 =3:1) Soak for 15 minutes, rinse with deionized water, then ultrasonically clean in acetone and alcohol for 5 minutes, and then dry in an oven for use;

[0035] (2) Install the above-mentioned cleaned glass sheet on the sample stage of the magnetron sputtering equipment, install the AZO ceramic target material, and adjust the target base distance to 160mm;

[0036] (3) Vacuumize the deposition chamber of the magnetron sputtering equipment, and pre-pump the argon and oxygen gas paths until the vacuum degree of the magnetron sputtering deposition chamber is better than 8.5×10 -4 At P...

Embodiment 2

[0040] Using Al 2 o 3The hot-pressed AZO ceramic target with a doping amount of 2% is a sputtering target, the target size is Φ75×5mm, the deposition atmosphere is a hydrogen atmosphere, the sputtering power is 80W, and the distance between the target and the base is 160mm. The AZO transparent conductive film is prepared Specific steps are as follows:

[0041] (1) use aqua regia (V HCl :V HNO3 =3:1) Soak for 15 minutes, rinse with deionized water, then ultrasonically clean in acetone and alcohol for 5 minutes, and then dry in an oven for use;

[0042] (2) Install the above-mentioned cleaned glass sheet on the sample stage of the magnetron sputtering equipment, install the AZO ceramic target material, and adjust the target base distance to 160mm;

[0043] (3) Vacuumize the deposition chamber of the magnetron sputtering equipment, and pre-pump the argon and oxygen gas paths until the vacuum degree of the magnetron sputtering deposition chamber is better than 8.5×10 -4 At Pa...

Embodiment 3

[0047] Using Al 2 o 3 The hot-pressed AZO ceramic target with a doping amount of 2% is a sputtering target, the target size is Φ75×5mm, the deposition atmosphere is a hydrogen atmosphere, the sputtering power is 80W, and the distance between the target and the base is 160mm. The AZO transparent conductive film is prepared Specific steps are as follows:

[0048] (1) use aqua regia (V HCl :V HNO3 =3:1) Soak for 15 minutes, rinse with deionized water, then ultrasonically clean in acetone and alcohol for 5 minutes, and then dry in an oven for use;

[0049] (2) Install the above-mentioned cleaned glass sheet on the sample stage of the magnetron sputtering equipment, install the AZO ceramic target material, and adjust the target base distance to 160mm;

[0050] (3) Vacuumize the deposition chamber of the magnetron sputtering equipment, and pre-pump the argon and oxygen gas paths until the vacuum degree of the magnetron sputtering deposition chamber is better than 8.5×10 -4 At P...

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Abstract

The invention relates to a preparation method of an aluminum-doped zinc oxide (AZO) transparent conducting film. The AZO film is prepared through an AZO ceramic target direct-current magnetron sputtering process in an argon-hydrogen mixed atmosphere at room temperature. The process parameters are as follows: the vacuum degree is 0.08-0.4Pa, the flow ratio of hydrogen gas to argon gas is (40:0.5)-(40:8)(SCCM), the sputtering power is 180W, the target-substrate distance is 160mm, and the deposition temperature is room temperature.

Description

technical field [0001] The invention relates to a preparation method of a transparent conductive oxide film. Background technique [0002] Transparent conductive oxide film (TCO) has low electrical conductivity, high transmittance in the visible region and high reflectivity in the infrared region, making it widely used in flat panel displays, touch panels, solar cell window electrodes, instrument windows, automobiles, and airplanes. Windshield, building energy-saving glass and many other fields have been widely used. At present, the most researched and applied TCO films are Sn-doped silver oxide (ITO) film and aluminum-doped zinc oxide (AZO) film, and the resistivity of TCO film is 10. -4 Ω·cm, with a transmittance of over 85% in the visible light region, and has been widely used in flat panel displays, solar cells, touch panels and other fields. However, because In is a scattered metal and the abundance in the earth's crust is very low, it is difficult to support the larg...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 屈飞古宏伟张腾丁发柱彭星煜王洪艳
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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