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Infrared gas sensor for detecting a variety of gases

A gas sensor and sensor technology, applied in semiconductor devices, instruments, electrical components, etc., can solve the problems of not realizing simultaneous detection of multiple gases, increasing complexity and cost, etc.

Inactive Publication Date: 2014-01-08
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In 2002, Rae System proposed to integrate discrete infrared light sources, detectors, and gas chambers into one TO 5 As a miniaturized infrared gas sensor in the tube shell, it can be used to detect hydrocarbons HC, carbon dioxide CO 2 , carbon monoxide CO and nitric oxide NO gas concentrations, but the simultaneous detection of multiple gases has not been realized, and multiple gases need to be separated before detection, which increases the complexity and cost of detection

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  • Infrared gas sensor for detecting a variety of gases
  • Infrared gas sensor for detecting a variety of gases
  • Infrared gas sensor for detecting a variety of gases

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0103] refer to figure 1 ,exist figure 1 The shown infrared gas sensor for multi-gas detection includes four sensitive elements, which are respectively: the first sensitive element 1, the second sensitive element 2, the third sensitive element 3 and the reference sensitive element 4, and the four sensitive elements are all Distributed on the circle centered on the nano-surface modified infrared light source 6, wherein two thermal insulation channels 5 are set between the first sensitive element 1 and the second sensitive element 2, and the third sensitive element 3 and the reference sensitive element 4 Two same heat-insulating channels 5 are also arranged between them; the four sensitive elements and the periphery of the nanometer surface-modified infrared light source 6 are all thermally isolated from each other by a thermal isolation wall 7 to reduce the influence of thermal crosstalk.

[0104]Using MEMS technology, four gas infrared sensors and MEMS infrared light sources ...

Embodiment 2

[0106] The present embodiment provides a nano surface modified infrared light source 6, as a specific example, refer to figure 2 In steps (a)-(g), the preparation process of the nano-surface modified infrared light source 6 of the present invention is described in detail as follows:

[0107] (a), growing silicon nitride 62 on a single crystal silicon substrate 61, experimental conditions; temperature 780°C, 330mTorr, SiH 2 Cl 2 ;24 sccm, NH 3 : 90 sccm;

[0108] (b) Deposition of amorphous silicon 63: the temperature is 270°C, the gas flow rate and ratio are SIH 4 : 24% NH 3 : 55%N 2 :5.2%RF:170;

[0109] (c), Al sputtering and annealing: magnetron sputtering Al, conditions: air pressure 10mTorr, after feeding Ar to meet the air pressure conditions, set RF to 8400W, and then perform annealing treatment at 450°C for 90 minutes;

[0110] (d) Wet etching of the Al film: using a conventional Al etching solution, Al-Si compound particles remain on the surface of the sample ...

Embodiment 3

[0122] 1) Infrared gas sensor concentration signal processing method

[0123] There are many gas detection methods based on the principle of infrared optics, among which the dual-wavelength detection method is more commonly used. This method can play the role of reference wavelength environment compensation, thereby effectively improving the anti-interference and stability of the system. There are also many methods for calculating gas concentration based on optical principles. At present, it is mainly determined which method is used to calculate the gas concentration according to the accuracy requirements. This embodiment mainly describes the linear interpolation-data table look-up calculation method used in the research process. This method is relatively simple, and its processing results meet the application requirements of most early warning and alarm occasions, such as coal mine gas alarms. The accuracy of this method mainly depends on the pre-calibrated data table. The mo...

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Abstract

The invention discloses an infrared gas sensor for detecting a variety of gases. An infrared radiation source and a plurality of thermopile sensors are produced into the same chip by adopting the standard CMOS / MEMS (Complementary Metal Oxide Semiconductors / Micro-electromechanical Systems) process, and the thermal crosstalk between coplanar sensors is reduced by means of thermal isolation walls, thermal isolation channels and vacuum wafer level aligned packaging between the chips. A singlechip integration technique is adopted to simultaneously process a plurality of sensors, filters of different narrow bands are adopted to be respectively assembled on the coplanarly arranged sensors, consequently, different gases can be spectroscopically detected, the processing cost is greatly reduced, meanwhile, thermal crosstalk and power consumption are reduced, and moreover, the precision of detection is further increased.

Description

technical field [0001] The invention relates to the technical field of infrared gas sensors, in particular to an infrared gas sensor for multi-gas detection. Background technique [0002] The development of Internet of Things technology has brought a wide range of application requirements for integrated, low-power, and low-cost infrared gas sensors. In industry and daily life, realize the control of dangerous gas, such as CO, CO 2 , NO, NO 2 , CH 4 The highly sensitive detection can avoid the huge harm caused by its leakage to social property and public safety. While improving the detection performance and portability of the sensor, the non-contact simultaneous detection of multiple gases can be realized to meet the development needs of the Internet of Things and complex environments for micro-infrared multi-gas sensors. With the development of MEMS and CMOS technology, infrared gas sensor can realize the miniaturization of infrared optical gas detection system. There a...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/20G01N21/3504
CPCH01L31/14H01L31/1804Y02P70/50
Inventor 谭秋林陈媛靖熊继军薛晨阳张文栋刘俊毛海央明安杰欧文陈大鹏
Owner ZHONGBEI UNIV
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