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An infrared gas sensor integrated with gas chamber packaging

A gas sensor and sensor technology, applied in instruments, measuring devices, scientific instruments, etc., can solve the problems of large gas chambers of MEMS infrared detectors

Active Publication Date: 2015-11-25
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above two MEMS infrared detectors still need to be packaged and protected in order to reduce environmental interference and noise due to the large volume of the gas chamber.

Method used

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  • An infrared gas sensor integrated with gas chamber packaging
  • An infrared gas sensor integrated with gas chamber packaging
  • An infrared gas sensor integrated with gas chamber packaging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] refer to figure 1 , is the air chamber structure and principle schematic diagram of the present invention, this air chamber comprises top plane 2, bottom plane and ellipse inner wall; The points are the two foci of the rotating ellipse, the light source 5 is located at the point O' on the bottom plane, and the point O' is symmetrical with the focus O on the reflective inner wall of the top plane 2 of the air chamber. In this way, from the point O' After the light emitted by the light source 5 is reflected by the inner wall of the ellipse, it is extended in reverse and intersects with the focal point O of the ellipse. According to the principle of elliptical optical propagation, the light emitted by the focal point is completely intersected with another focal point A or A' through the inner wall of the ellipse, which is the present invention The position of middle sensitive element 4. The rotating ellipse 1 rotates one circle along the vertical axis of rotation OO', tha...

Embodiment 2

[0114] refer to Figure 5 ,exist Figure 5 The shown infrared gas sensor for multi-gas detection includes four sensitive elements, which are respectively: a first sensitive element 51, a second sensitive element 52, a third sensitive element 53 and a reference sensitive element 54, and the four sensitive elements are all Distributed on the circle centered on the nano-surface modified infrared light source 56, wherein an L-shaped heat insulation channel 55 is set between the first sensitive element 51 and the second sensitive element 52, the third sensitive element 53 and the reference sensitive element An L-shaped heat insulation channel 55 is also set between 54; the four sensitive elements and the nano-surface modified infrared light source 56 are all thermally isolated from each other by a thermal isolation wall 57 to reduce the influence of thermal crosstalk.

[0115] Using MEMS technology, four gas infrared sensors and MEMS infrared light sources are prepared on a single...

Embodiment 3

[0117] Different from the infrared light source in Embodiment 1, this embodiment provides a nano-surface modified infrared light source 56. As a specific example, refer to Image 6 In steps (a)-(g), the preparation process of the nano-surface modified infrared light source 56 of the present invention is described in detail as follows:

[0118] (a), growing silicon nitride 62 on a single crystal silicon substrate 61, experimental conditions: temperature 780°C, 330mTorr, SiH 2 Cl 2 : 24 sccm, NH 3 : 90 sccm;

[0119] (b) Deposition of amorphous silicon 63: the temperature is 270°C, and the gas ratio is SIH 4 : 24% NH 3 : 55%N 2 :5.2% RF: 170:

[0120] (c), Al sputtering and annealing: magnetron sputtering Al, conditions: air pressure 10mTorr, after feeding Ar to meet the air pressure conditions, set RF to 8400W, and then perform annealing treatment at 450°C for 90 minutes;

[0121] (d) Wet etching of the Al film: using a conventional Al etching solution, Al-Si compound pa...

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Abstract

The invention discloses an infrared gas sensor with an integrally packaged air chamber. The infrared gas sensor comprises the integrally packaged air chamber, an infrared light source and a sensitive element, wherein the air chamber comprises a top plane (2), a bottom plane and an elliptical inner wall; two rotational ellipses (1) share a common focus O; the sites of the focus O and the sensitive element (4) are two focuses of the rotational ellipses; the light source 5 is positioned in the point O' on the bottom plane; the point O' and the focus O are symmetrical about the reflection inner wall of the top plane (2) of the air chamber; the point O' and lower focuses A and A' of the elliptical inner wall share a horizontal plane. The air chamber with a packaging function is designed into a reflective type, so that not only is the light length increased, but also the interference caused by air pumping through an air pump in a conventional sealed air chamber is avoided; the sensitive element and the air chamber are assembled by a wafer-level alignment bonding technology, so that a low-vacuum protection function is also achieved; meanwhile as the inner wall of the air chamber adopts gold plated ellipsoid design, and infrared beams enter the surface of the sensor in parallel, the infrared reflection rate is improved, and the loss in a light conduction process is reduced.

Description

technical field [0001] The invention relates to the technical field of infrared gas sensors, in particular to an infrared gas sensor integrated with gas chamber packaging. Background technique [0002] The gas chamber means that when the infrared gas sensor detects the gas, the gas is passed into the space through which the infrared light passes. The size of the gas chamber is determined by the type of gas, the measurement range and the resolution. For a long time, because the sensor is basically a single light source and a discrete sensitive source integrated with a packaged package, it cannot be miniaturized, resulting in infrared sensors not being widely used. Domestic products are basically assembled with imported foreign core components. [0003] From the perspective of the technological development trend of gas sensors, on the one hand, the performance is continuously improved; on the other hand, it is miniaturization, integration and low power consumption. With the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/17
Inventor 谭秋林陈媛靖杨明亮熊继军薛晨阳张文栋刘俊李超
Owner ZHONGBEI UNIV
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