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Insulated gate bipolar semiconductor device

A technology of N-type semiconductors and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing IGBT conduction voltage drop, high conduction voltage drop, and low hole concentration, and achieves The effect of flexible control and low conduction voltage drop

Inactive Publication Date: 2014-01-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because IGBT has the advantage of low turn-on voltage drop due to its conductance modulation effect, but at the same time, IGBT also has the problem of slow turn-off speed. It is usually necessary to control the collector hole injection efficiency or use minority carrier lifetime control technology to reduce turn-off. Time, which will inevitably weaken the conductance modulation effect, thereby increasing the conduction voltage drop of the IGBT
Especially in the IGBT structure with thick drift region or low collector injection efficiency, the hole concentration near the body region is usually low, the conductance modulation effect is weak, and the conductance voltage drop is high

Method used

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  • Insulated gate bipolar semiconductor device
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Examples

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Embodiment 1

[0016] Such as figure 1 As shown, this example is an insulated gate bipolar semiconductor device with a trench gate structure, which includes a collector metal 12, a P-type semiconductor material 1, an N-type semiconductor material 2, an N-type drift region 3, and a first P-type semiconductor stacked in sequence. Body region 4 and emitter metal 11, the first P-type semiconductor body region 4 includes two mutually independent emitter regions 5; it is characterized in that it also includes a second P-type semiconductor region 8, an N-type semiconductor region 9, Oxide layer 6 and polysilicon 7; the oxide layer 6 covers the outer surface of polysilicon 7 to form two slot gate structures respectively, and the two slot gate structures are arranged at both ends of the insulated gate bipolar semiconductor device, and the slots The gate structure is respectively connected to the side of the emitter region 5 and the side of the first P-type semiconductor body region 4 and embedded in ...

Embodiment 2

[0021] Such as figure 2 As shown, this example is an insulated gate bipolar semiconductor device with a planar gate structure. Compared with Example 1, this example has no groove gate, and the oxide layer 6 is arranged on the upper surface of the N-type drift region 3 and part of the first P-type semiconductor device. The upper surface of the body region 4 is provided with a planar gate electrode 13 on the upper surface of the oxide layer 6 .

[0022] The manufacturing method of this example is:

[0023]First perform N-type ion implantation on the back of the N-type semiconductor single crystal 3 to form a field stop layer 2, then perform boron ion implantation on the front of the N-type semiconductor single crystal 3 to form a P-type body region 4, and then perform a boron ion implantation in the body region to form a second P-type semiconductor region 8, and N-type ion implantation is performed in this region to form N-type semiconductor region 9, and then an oxide layer 6...

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Abstract

The invention relates to a semiconductor technology, in particular to an insulated gate bipolar semiconductor device. An IGBT formed by a bipolar junction transistor (BJT) and a metal-insulator-semiconductor field effect transistor (MISFET) in a second conducting type in a combining mode is used, semiconductor materials in the second conducting type of the MISFET in the second conducting type are used as a drifting zone, a body zone in a first conducting type is formed on the upper surface of the drifting zone, a groove gate structure formed by insulating materials and semi-insulating materials or a conductor is formed in the body zone, a semiconductor in the second conducting type is formed in the body zone as a source zone of the MISFET, the source zone is connected by metal layers to form an IGBT emitter electrode, and conducting materials or the semi-insulating materials of the groove gate structure are led out as a grid electrode of the IGBT. The insulated gate bipolar semiconductor device has the advantages of being low in connecting pressure drop and quick in turning off. The insulated gate bipolar semiconductor device is good in use.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an insulated gate bipolar semiconductor device. Background technique [0002] An Insulated Gate Bipolar Transistor (IGBT) is a bipolar transistor controlled by a MOS gate voltage, which has the ability to switch large currents at high voltages. Because IGBT has the advantage of low turn-on voltage drop due to its conductance modulation effect, but at the same time, IGBT also has the problem of slow turn-off speed. It is usually necessary to control the collector hole injection efficiency or use minority carrier lifetime control technology to reduce turn-off. Time, which will inevitably weaken the conductance modulation effect, thereby increasing the conduction voltage drop of the IGBT. Especially in the IGBT structure with thicker drift region or low collector injection efficiency, the hole concentration near the body region is usually lower, the conductance modulation effect is weake...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/7397H01L29/063
Inventor 李泽宏邹有彪宋文龙李果刘建吴明进
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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