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LED epitaxial wafer, method for making the same, and LED chip including the same

A technology of LED epitaxial wafers and LED chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of many lattice defects and poor crystal quality of the active layer, so as to improve the luminous efficiency, improve the crystal quality, and improve the interface state and roughness effects

Active Publication Date: 2016-06-22
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to provide an LED epitaxial wafer, its manufacturing method and an LED chip including the same, so as to solve the technical problems of poor crystallization quality of the active layer and many lattice defects existing in the existing LED devices

Method used

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  • LED epitaxial wafer, method for making the same, and LED chip including the same
  • LED epitaxial wafer, method for making the same, and LED chip including the same
  • LED epitaxial wafer, method for making the same, and LED chip including the same

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Embodiment 1

[0055] This embodiment provides a method for manufacturing an LED epitaxial wafer, comprising the following steps:

[0056] First, a GaN buffer layer, GaN layer, N-type AlGaN, and Si-doped N-type GaN are sequentially formed from the surface of the substrate outward, including the following steps:

[0057] Raise the temperature from room temperature to 1100°C, and process the substrate for 10 minutes under a hydrogen atmosphere with a pressure of 500mbar in the reaction chamber;

[0058] The temperature was lowered to 580°C, and the substrate was nitrided in a mixed atmosphere of hydrogen and nitrogen at a pressure of 500 torr in the reaction chamber. The treatment time was 5 minutes, and the volume fraction of hydrogen in the mixed atmosphere was 10%; Ethylgallium or trimethylgallium, a GaN buffer layer with a thickness of 540nm is grown on the substrate;

[0059] Raise the temperature to 1200°C, and in a mixed atmosphere of hydrogen and nitrogen at a pressure of 200torr, pas...

Embodiment 2

[0071] This embodiment provides a method for manufacturing an LED epitaxial wafer, wherein the steps of sequentially forming a GaN buffer layer 21, a GaN layer 23, an N-type AlGaN, and a Si-doped N-type GaN from the surface of the substrate outward, and The steps of forming a P-type AlGaN layer, a Mg-doped P-type GaN layer and a P-type GaN contact layer on the layer are the same as those in Embodiment 1.

[0072] In this embodiment, the step of forming the active layer on the N-type GaN layer: sequentially forming 10 groups of quantum well layers, forming each group of quantum well layers includes the following steps:

[0073] In a nitrogen atmosphere with a temperature of 730°C and a pressure of 300torr, trimethylgallium is introduced, and trimethylindium is grown to a thickness of 2.5nm, and the doping concentration of In is 3E+20atom / cm 3 InGaN potential well layer;

[0074] Stop feeding trimethyl indium, raise the temperature to 840°C, keep the pressure constant, and grow...

Embodiment 3

[0076] This embodiment provides a method for manufacturing an LED epitaxial wafer, wherein the steps of sequentially forming a GaN buffer layer, a GaN layer, N-type AlGaN, and Si-doped N-type GaN from the surface of the substrate outward, and on the active layer The steps of forming the P-type AlGaN layer, the Mg-doped P-type GaN layer and the P-type GaN contact layer are the same as those in Embodiment 1.

[0077] In this embodiment, the step of forming the active layer on the N-type GaN layer: sequentially forming 13 groups of quantum well layers, forming each group of quantum well layers includes the following steps:

[0078] In a mixed atmosphere of hydrogen and nitrogen at a temperature of 760°C and a pressure of 150 torr, triethylgallium and trimethylindium are injected to grow to a thickness of 3.5nm, and the doping concentration of In is 5E+20atom / cm 3 InGaN potential well layer, wherein the volume fraction of hydrogen in the mixed atmosphere is 15%;

[0079] Stop fee...

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Abstract

The invention discloses an LED epitaxial wafer, a manufacturing method thereof and an LED chip comprising the same. The epitaxial wafer includes: an undoped GaN layer, an N-type GaN layer, an active layer and a P-type GaN layer which are arranged in order from the surface of the substrate outwards, the active layer includes one or more groups of quantum well layers, each quantum well layer The layers include an InGaN well layer, a GaN barrier layer, and an MgN barrier layer that are sequentially disposed in a direction away from the substrate. The method includes the following steps: forming an undoped GaN layer, an N-type GaN layer, an active layer and a P-type GaN layer in sequence from the surface of the substrate outward, and the step of forming the active layer includes sequentially forming one or more groups of quantum wells The step of forming each quantum well layer includes: forming an InGaN well layer, a GaN barrier layer and an MgN barrier layer in sequence from the surface of the N-type GaN layer outward. The brightness and internal quantum efficiency of the LED obtained by using the manufacturing method of the LED epitaxial wafer provided by the present invention are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an LED epitaxial wafer, a manufacturing method thereof and an LED chip comprising the same. Background technique [0002] GaN-based materials (including GaN, AlGaN, InGaN, MgGaN, and SiGaN) are direct bandgap semiconductors, and their bandgap is continuously adjustable from 1.8 to 6.2V. They are the most commonly used materials for producing high-brightness blue, green, and white LEDs. It is widely used in fields such as backlight, large-size screen display, signage indication, signal lamp and lighting. [0003] The manufacturing method of GaN-based LED chips is usually: use MOCVD (metal organic compound vapor deposition) to epitaxially grow a layer of GaN buffer layer on the substrate; then grow non-doped GaN, the purpose is to improve the quality of subsequent epitaxial crystals. On this basis, N-type GaN, active layer and P-type GaN are grown sequentially to fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 王霄季辉徐迪梁智勇
Owner XIANGNENG HUALEI OPTOELECTRONICS
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