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A transistor and a manufacturing method thereof

A manufacturing method and triode technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as unstable device amplification factors

Inactive Publication Date: 2018-12-28
深圳市福来过科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the surface of the base region and the emitter region, a large number of processes will be experienced, such as implantation, etching, metallization, etc., which will bring a large number of defects to the surface of the base region and the emitter region, which will eventually lead to a very unstable amplification factor of the device.

Method used

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  • A transistor and a manufacturing method thereof
  • A transistor and a manufacturing method thereof
  • A transistor and a manufacturing method thereof

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Embodiment Construction

[0013] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0014] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or posi...

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Abstract

The invention relates to a transistor and a manufacturing method thereof. The transistor comprises a substrate of a first conductivity type; an epitaxial layer of a first conductivity type formed on the substrate; a trench formed in the epitaxial layer; an emission region of a first conductivity type formed at the bottom of the trench and the sidewall; a base region of a second conductivity type formed in the epitaxial layer and surrounding the trench; a base contact region formed in the epitaxial layer region to connect the base region. The forming steps of the base region includes forming afirst polysilicon layer of a second conductivity type on the bottom and sidewalls of the trench; performing a high temperature oxidation process of the first polysilicon layer such that the first polysilicon layer is oxidized into a first oxide layer, and impurities in the first polysilicon layer diffuse toward the epitaxial layer to form a second conductivity type base region surrounding the trench. The transistor has a good interface state between the base region and the emission region, and the amplification coefficient is stable.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a triode and a manufacturing method thereof. Background technique [0002] In the prior art, the base region is formed by an annealing process after the implantation process, and the junction depth and junction morphology of the base area are greatly affected by the annealing process, while the polycrystalline emitter process is all implanted with a large dose in the polycrystalline body, and then high temperature and rapid Thermal annealing, so that impurities diffuse into the base region to form the emitter junction. On the surface of the base region and the emitter region, a large number of processes will be experienced, such as implantation, etching, metallization, etc., which will bring a large number of defects to the surface of the base region and the emitter region, and eventually cause the amplification factor of the device to be very unstable. Contents of the i...

Claims

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Application Information

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IPC IPC(8): H01L29/73H01L21/331H01L29/10
CPCH01L29/1004H01L29/66234H01L29/73
Inventor 不公告发明人
Owner 深圳市福来过科技有限公司
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