Production technology capable of improving copper surface work function
A production process and copper surface technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of easy cracking of the surface layer, reduction of copper conductivity, and limited increase in work function. simple effect
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Embodiment 1
[0016] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:
[0017] The first step, copper substrate pretreatment:
[0018] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;
[0019] The second step, ion sputtering:
[0020] Pure metal chromium is used as the target, and the target is negatively potentialized, and the voltage is -1500V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -100V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;
[0021] The third step is to generate the outer s...
Embodiment 2
[0025] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:
[0026] The first step, copper substrate pretreatment:
[0027] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;
[0028] The second step, ion sputtering:
[0029] Pure metal tungsten is used as the target, and the target is negatively potentialized, and the voltage is -2500V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -500V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;
[0030] The third step is to generate the outer s...
Embodiment 3
[0034] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:
[0035] The first step, copper substrate pretreatment:
[0036] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;
[0037] The second step, ion sputtering:
[0038] Pure metal nickel is used as the target, and the target is negatively potentialized, and the voltage is -2000V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -300V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;
[0039] The third step is to generate the outer she...
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