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Production technology capable of improving copper surface work function

A production process and copper surface technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of easy cracking of the surface layer, reduction of copper conductivity, and limited increase in work function. simple effect

Inactive Publication Date: 2015-02-18
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many ways to improve the work function of the copper surface, the main ones are: (1) alloy method, the advantage is that the production is convenient, and the disadvantage is at the cost of reducing the conductivity of copper; (2) the surface insulating layer method: the advantage is to suppress the effect of electron escape Well, the disadvantage is that the surface layer is easy to crack; (3) plasma treatment method: the advantage is that the surface layer is treated without affecting the conductivity of copper, and the disadvantage is that the work function has a limited increase, generally 0.3-0.4eV

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:

[0017] The first step, copper substrate pretreatment:

[0018] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;

[0019] The second step, ion sputtering:

[0020] Pure metal chromium is used as the target, and the target is negatively potentialized, and the voltage is -1500V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -100V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;

[0021] The third step is to generate the outer s...

Embodiment 2

[0025] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:

[0026] The first step, copper substrate pretreatment:

[0027] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;

[0028] The second step, ion sputtering:

[0029] Pure metal tungsten is used as the target, and the target is negatively potentialized, and the voltage is -2500V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -500V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;

[0030] The third step is to generate the outer s...

Embodiment 3

[0034] The production technique for improving the copper surface work function of the present embodiment is characterized in that it comprises the following steps:

[0035] The first step, copper substrate pretreatment:

[0036] Remove the pollutants on the surface of the copper substrate, put it in a vacuum, and the vacuum degree is controlled at 20-10 -5 Pa;

[0037] The second step, ion sputtering:

[0038] Pure metal nickel is used as the target, and the target is negatively potentialized, and the voltage is -2000V; argon is used as the carrier gas, and the pressure is 10Pa; the copper substrate is negatively potentialized, and the voltage is -300V; argon is ionized into plasma, which is positively charged The argon ions bombard the target metal, and the metal ion air mass under the sputtering is attracted by the negative potential of the substrate to deposit on the surface of the copper substrate to form a thin film;

[0039] The third step is to generate the outer she...

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PUM

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Abstract

The invention provides a production technology capable of improving a copper surface work function. The production technology comprises copper base pre-treatment, ion sputtering and outer protective layer production. According to the production technology, a base is made of pure copper; chromium and tungsten in vacuum are used as targets; argon is used as carrier gas; an ion sputtering technology is adopted; argon is ionized into plasma under the action of an electromagnetic field; the positively-charged argon ions bombard the targets; the sputtered metal ion gas mass is deposited on the surface of the copper base under the negative potential attraction of the base; and the copper base is put into o-dichlorobenzene and under the ultraviolet irradiation, chloride ions decomposed from the o-dichlorobenzene and the metal ions on the surface of the copper base undergo a chemical reaction to produce a single-atomic layer chloride so that a dipole is formed and escape of inner electrons of the metal is avoided and the emissive ability of copper surface electrons is reduced. The production technology greatly improves the copper surface work function, has simple processes, can be used for treatment on small electron devices and is suitable for large-scale lead production.

Description

technical field [0001] The invention relates to a copper surface treatment method, in particular to a production process for improving the work function of the copper surface. Background technique [0002] As a good conductor, copper is widely used in metal wires, but due to the large amount of electrons escaping under high voltage, a lot of energy is wasted, and at the same time, it damages the organic materials used as insulation and reduces the insulation performance. If the work function of the copper surface is improved through surface treatment, the ability of electrons to escape is reduced without changing the electrical conductivity and mechanical properties of copper, thereby reducing the corona loss on the surface of the bare conductor and greatly reducing the energy loss during power transmission; It is of great significance to reduce and suppress the ability of the conductor to emit electrons into the insulating medium, increase the working field strength of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/58
Inventor 雷清泉于庆先郝春成
Owner QINGDAO UNIV OF SCI & TECH
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