Microemulsion-solvothermal technique of orthorhombic InOOH

Abstract

The invention discloses a microemulsion-solvothermal technique of orthorhombic InOOH, which comprises the following steps: (1) preparation of microemulsion: a. sequentially adding microemulsion, mixture of n-hexane, n-pentanol or n-butanol, and surfactant into a beaker in a volume ratio of (18-22):(4-6):(8-12) under magnetic stirring conditions; b. adding 1-2ml of indium salt solution into the beaker, dropwisely adding 1.5-3ml of organic amine or inorganic alkali solution, continuing stirring for 12-18 minutes, and regulating the pH value to 8-11 to obtain an emulsion; and (2) preparation of orthorhombic InOOH by solvothermal technique: a. transferring the emulsion to a polytetrafluoroethylene vessel, closing the polytetrafluoroethylene vessel in a stainless steel high-pressure reaction kettle, heating to 180-220 DEG C to react for 18-20 hours, and cooling to room temperature; b. centrifuging the product, washing, drying the precipitate, and grinding to obtain the orthorhombic InOOH. The technique enhances the yield on the premise of lowering the optimum reaction temperature; and the prepared orthorhombic InOOH has excellent gas sensitivity.

Description

technical field [0001] The invention belongs to the field of preparation of orthorhombic InOOH, in particular to a method for preparing orthorhombic InOOH by a microemulsion-solvothermal process. Background technique [0002] Indium oxide is a special wide-bandgap oxide semiconductor with low resistance and high catalytic activity. It has been widely used in solar cells, flat panel displays, optical and optoelectronic devices, and gas sensors. The structure of cubic indium oxide can be imagined as an incomplete close-packed structure of oxygen ions. Indium ions form a face-centered cubic lattice. 3 / 4 of the tetrahedral gaps in the sub-lattice are occupied by oxygen ions, and 1 / 4 are empty. The defects are oxygen vacancies and interstitial indium ions. Under high pressure, the structure of indium oxide changes from cubic to hexagonal, and hexagonal indium oxide belongs to The space group contains 6 In2O3 molecules in its unit cell, and the crystal constants a=0.549 nm, c=0...

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Problems solved by technology

As the precursor of hexagonal indium oxide, orthorhombic InOOH has a one-dimensional nanostructure, large specific surface area, and good stability. Previous literature reports that hexagonal indium oxide needs to be prepared under high temperature and high pressure, such as Prewitt et al. At 1000°C and 65 kbar, Atou et al. prepared hexagonal indium oxide at 15-25 GPa, which has relatively high energy consumption and relatively strict requirements for equipment, which requires a large investment in equipment.

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