Method for realizing blue shift of band gap of semiconductor quantum well structure

Abstract

The invention provides a method for realizing blue shift of a band gap of a semiconductor quantum well structure. The method comprises the steps of depositing a surface sacrificial layer on the quantum well structure; selecting a regional surface sacrificial layer through ultrashort pulse laser irradiation or scanning to realize chemical modification or introducing structure defects in the regional surface sacrificial layer to form a laser modified region; and conducting quick thermal annealing to a component comprising the quantum well structure and the surface sacrificial layer, transmitting the chemical modification of the laser modified region or the introduced structure defects into the quantum well structure through a thermal induction effect to enable well / barrier components of the quantum well structure to be mutually mixed to realize the wavelength blue shift of the band gap of the quantum well structure.

Description

technical field [0001] The invention relates to semiconductor optical device and photonic integrated circuit technology, in particular to a method for realizing the bandgap blue shift of semiconductor quantum well structure by using ultrashort pulse laser technology. Background technique [0002] With the continuous development of optical fiber communication, the demand for monolithic integration of various photonic devices continues to increase. The current development of photonic integrated circuits is just like the large-scale electronic integrated circuits that occurred in the 1970s, and will be realized in the future. Larger scale applications. [0003] At present, the biggest difference from microelectronic integrated circuits is that photonic integrated circuits need to form various materials with different band gaps on the same substrate to meet the requirements of various active and passive devices. The detector needs to absorb light, while the waveguide needs to t...

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Problems solved by technology

In this method, gallium is diffused into silicon oxide by depositing a silicon oxide film and high-temperature annealing, and then the diffusion of vacancies is generated to cause quantum well mixing, but the temperature required by this method is too high, and it is not easy to select a region to control;

[0006] (3) Quantum well hybridization is also realized by the method of light. The University of Glasgow has developed the use of continuous Nd:YAG laser heating to drive the inter-diffusion between different barriers and wells in the quantum well structure to achieve quantum well hybridization; subsequently, using pulse width The Nd:YAG laser with a few nanoseconds also realizes quantum well hybridization and device development, but this method has point defect generation and thermally induced diffusion at the same time, and the repeatability and stability need to be improved.

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