Method for preparing graphene film on nonmetallic substrate at low temperature

Abstract

The invention discloses a method for preparing a graphene film on a nonmetallic substrate at low temperature. By adopting the method disclosed by the invention, a plasma source is introduced to the graphene film preparation process by using a technology of chemical vapor deposition method to prepare a uniform graphene film on the non-catalytic non-metallic substrate, the technology for preparing the graphene by means of traditional chemical vapor deposition method is improved, the direct growth of the graphene on the surface of a semiconductor base material and an insulator medium base material are achieved to realize target application, the shortcoming that the uniform and high-quality graphene film on a curved surface or a surface with a three-dimensional structure cannot be prepared by using the traditional method is overcome, and the subsequent necessary metal etching and graphene transfer steps during graphene preparation by the traditional chemical vapor deposition method are eliminated; as plasma enhancement effect is utilized, the method disclosed by the invention effectively reduces graphene preparation temperature, not only is energy saving, but also is practical, simultaneously, the method reduces working procedures, reduces cost, and has a pretty good application prospect in the aspects of preparing a transparent electrode material and constructing an electronic component and a photoelectron component.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a method for preparing a graphene film. Background technique [0002] With the rapid development of modern information technology, the shortcomings of silicon materials such as low electro-optic coefficient and low luminous efficiency hinder the application of silicon materials in the field of high-speed and high-bandwidth data transmission. The development has injected fresh blood. [0003] Dirac materials represented by graphene have been widely concerned by researchers from all over the world since their inception, and have become a new research hotspot. As a unique two-dimensional crystal, graphene has excellent mechanical properties, ultra-high thermal conductivity and carrier mobility, and relatively high carrier saturation drift velocity, making graphene widely used in transistors, solar cells, and sensors. , supercapacitors, ultrafast electronic...

AI Technical Summary

Problems solved by technology

[0009] Although the conventional chemical vapor deposition method provides an effective way to control the number and size of graphene layers, it is a pity that the preparation of graphene by conventional chemical vapor deposition generally requires catalytic growth of graphene on the metal surface. , and then transfer the metal to a different substrate after etching, and the growth temperature is as high as 1000 ° C or even higher, which increases power consumption and time costs, etc., and also puts forward higher requirements for equipment; in addition, the Mr. It is difficult to obtain a uniform high-quality graphene film on a curved surface or a surface with a three-dimensional structure by the long post-transfer method, so this method is not suitable for the construction of large-scale optoelectronic devices and industrial production applications, and is not conducive to energy saving and environmental protection

[0010] In summary, the existing technologies for preparing graphene films have problems such as high growth cost, high growth temperature, low yield, complicated steps, no energy saving and environmental protection, and difficulty in growing graphene on substrates with three-dimensional structures.

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