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Fan-shaped spray head structure for vapor phase epitaxy of material

A vapor phase epitaxy, fan-shaped nozzle technology, applied in metal material coating process, gaseous chemical plating, chemical reactive gas and other directions, to achieve the effect of good use and improve production efficiency

Active Publication Date: 2013-05-15
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to address the shortcomings of the prior art, to solve the problem of providing uniform precursor mixing in larger substrates and multiple substrates, that is, large-area deposition areas, and to provide a fan-shaped shower head structure, so that the first precursor Compounds, second precursors, and various protective gases are fully mixed in a large-area reaction area to form a relatively uniform flow field

Method used

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  • Fan-shaped spray head structure for vapor phase epitaxy of material
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  • Fan-shaped spray head structure for vapor phase epitaxy of material

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Experimental program
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Effect test

Embodiment 1

[0033] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the material of the nozzle needs to be selected with high strength, no chemical reaction with the reaction gas, and a material with a low thermal expansion coefficient, such as the nozzle made of quartz, see the attached image 3 .

[0034] The intake pipe of the quartz nozzle is determined by the number of isolation areas below, and the isolation area requires at least three, that is, in NH 3 Add N between GaCl and 2 as an insulating gas. Therefore, the number of intake pipes is at least three, and the three intake pipes are independent of each other, and the intake flow is controllable.

[0035] When the number of isolated areas is three, the gas enters the isolated areas from the intake pipe and is separated, then split or preheated, and then sprayed out from the nozzle.

[0036] Since the middle area of ​​the nozzle is fed wit...

Embodiment 2

[0039] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the nozzle material needs to be high-strength, does not chemically react with the reaction gas, and has a low thermal expansion coefficient, such as the nozzle made of quartz, see the attached Figure 4 .

[0040] The intake pipe of the quartz nozzle is determined by the number of isolation areas below, and the isolation area requires at least three, that is, in the NH 3 Add N between GaCl and 2 as a shielding gas. Therefore, the number of intake pipes is at least three, and the three intake pipes are independent of each other, and the intake flow is controllable.

[0041] If the number of isolation areas is increased to five, that is, in NH 3 Add a N on the outside of GaCl and GaCl 2 isolation area (i.e. each sprinkler has 3 N 2 isolation zone), the shunted and preheated NH 3 Within a short distance after the GaCl gas is eject...

Embodiment 3

[0044] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the nozzle material needs to be high-strength, does not chemically react with the reaction gas, and has a low thermal expansion coefficient, such as the nozzle made of quartz, see the attached Figure 5 .

[0045] The intake pipe of the quartz nozzle is determined by the number of isolation areas below, and the isolation area requires at least three, that is, in the NH 3 Add N between GaCl and 2 as a shielding gas. Therefore, the number of intake pipes is at least three, and the three intake pipes are independent of each other, and the intake flow is controllable.

[0046] When the number of isolated areas is three, the gas enters the isolated area from the intake pipe and is separated, then split or preheated, and then sprayed out from the nozzle.

[0047] Since the middle area of ​​the nozzle is fed with N 2 , so NH3 and GaCl d...

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Abstract

The invention discloses a fan-shaped spray head structure for vapor phase epitaxy of a material. A first precursor, a second precursor and various protective gases are sufficiently mixed in a large-area reaction region to form a relatively uniform flow field. The structure disclosed by the invention comprises more than one gas inlet pipeline; a controller for detecting and controlling the gas inlet flow rate and flow is arranged on the gas inlet pipeline; more than one fan-shaped independent isolation region is arranged in a cavity of the spray head; a sealing plate at the top end of the isolation region is connected with the gas inlet pipeline; one and more gas nozzles are formed on a gas outlet baffle at the bottom end of the isolation region; and a round reaction cavity is arranged below the spray head. According to the invention, large-scale production of III group-nitride semiconductor material is realized, and the production efficiency of the III group-nitride semiconductor material is improved.

Description

technical field [0001] The present invention relates to a device for chemical vapor deposition (CVD) on a substrate, in particular to a showerhead design for hydride vapor phase epitaxy (HVPE) with uniform deposition over a large area. Background technique [0002] As the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high-quality III-nitride films takes on greater importance. Hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III-nitride semiconductor materials, such as the mass production of gallium nitride (GaN) wafers. To increase throughput and throughput, uniform mixing of precursors over larger substrates and / or more substrates and larger deposition areas is desirable. These factors are very important as they directly affect the cost of producing electronic devices and thus the competitiveness of the devices...

Claims

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Application Information

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IPC IPC(8): C23C16/455C30B25/14
Inventor 张俊业刘鹏毕绿燕赵红军袁志鹏张国义童玉珍
Owner SINO NITRIDE SEMICON
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