Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns

A technology of tellurtungstate and erbium ions, which is applied in the field of high-concentration erbium ion-doped mid-infrared 2.7μm luminescent tellurungstate glass, can solve the problems that have not been reported, and achieve high doping concentration and infrared transmittance. High, excellent physical and chemical properties

Inactive Publication Date: 2013-04-24
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Tellurtungstate glass has the characteristics of the above-mentioned heavy metal oxide glass, and has achieved a laser output of 2 μm, but there are no reports at home and abroad on the study of erbium ion single-doped mid-infrared 2.7 μm luminescence.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns
  • High-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns
  • High-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Composition as in Table 1 1 # As shown, the specific preparation process is as follows:

[0029] According to table 1 in 1 # The mole percentage of the glass composition, calculate the corresponding weight of each composition, weigh the raw materials and mix them uniformly; put the mixture into a corundum crucible and melt it in a silicon carbide rod electric furnace at 1200 ° C, and clarify it for 15 minutes after the mixture is completely melted. Minutes, pour the molten glass into the preheated mold; quickly move the glass into a muffle furnace that has been heated to 420°C, keep it warm for 10 hours, then lower it to room temperature at a rate of 10°C / hour, and take out the glass after cooling completely sample.

[0030] The test results for this glass are as follows:

[0031] Take a small sample after annealing, grind it into a fine powder with an agate mortar, and conduct a differential thermal analysis test. The differential thermal curve of the mid-infrared ...

Embodiment 2

[0034] Composition as in Table 1 2 # As shown, the specific preparation process is as follows:

[0035] According to table 1 in 2 # The mole percentage of the glass composition, calculate the corresponding weight of each composition, weigh the raw materials and mix them uniformly; put the mixture into a corundum crucible and melt it in a silicon carbide rod electric furnace at 1200 ° C, and clarify it for 15 minutes after the mixture is completely melted. Minutes, pour the molten glass into the preheated mold; quickly move the glass into a muffle furnace that has been heated to 420°C, keep it warm for 10 hours, then lower it to room temperature at a rate of 10°C / hour, and take out the glass after cooling completely sample.

[0036] The test results for this glass are as follows:

[0037] Take a small sample after annealing, grind it into a fine powder with an agate mortar, and conduct a differential thermal analysis test.

[0038] Process the annealed sample into a 20×10×1...

Embodiment 3

[0040] Composition as in Table 1 3 # As shown, the specific preparation process is as follows:

[0041] According to table 1 in 3 # The mole percentage of the glass composition, calculate the corresponding weight of each composition, weigh the raw materials and mix them uniformly; put the mixture into a corundum crucible and melt it in a silicon carbide rod electric furnace at 1200 ° C, and clarify it for 15 minutes after the mixture is completely melted. Minutes, pour the molten glass into the preheated mold; quickly move the glass into a muffle furnace that has been heated to 420°C, keep it warm for 10 hours, then lower it to room temperature at a rate of 10°C / hour, and take out the glass after cooling completely sample.

[0042] The test results for this glass are as follows:

[0043] Take a small sample after annealing, grind it into a fine powder with an agate mortar, and conduct a differential thermal analysis test.

[0044] Process the annealed sample into a 20×10×1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-concentration erbium ion doped tellurium tungstate glass capable of emitting light at mid-infrared 2.7 microns. The glass comprises the following components by molar percent: 58-70% of TeO2, 15-25% of WO3, 0-15% of La2O3, 0-15% of LaF3 and 2-4% of Er2O3. The glass is prepared by adopting an electric furnace melting method of a corundum crucible and a silicon carbide rod. The glass is high in doping concentration of erbium ion, high in infrared transmittance near to the mid-infrared 2.7 microns and good in physicochemical properties; and the stability parameter delta T is not less than 180 DEG C. Strong mid-infrared 2.7 microns fluorescence is obtained under pumping of a laser diode with a wavelength of 980 nm; and the glass is suitable for preparation and application of erbium ion doped special glass and optical fiber materials capable of emitting light at mid-infrared 2.7 microns.

Description

technical field [0001] The invention relates to glass, in particular to high-concentration erbium ion-doped mid-infrared 2.7 μm luminous tellurite tungstate glass. Background technique [0002] The erbium ion 2.7μm laser output is first obtained by doping the crystal with erbium ions. In recent years, 2.7μm output solid-state lasers doped with erbium ions have attracted the attention of researchers because of their important applications in medical surgery, remote sensing detection, bioengineering and military fields. The 3 μm pulsed and continuous laser output was first reported in LiYF4 crystal in 1967. In 1988, Pollack first reported the ZBLAN fluoride fiber doped with erbium ions, due to the Er 3+ : 4 I 11 / 2 → 4 I 13 / 2 Transition, to obtain a laser output with a center wavelength of 2.78 μm and an output energy of 75J. In 2008, Zhu et al. obtained watt-level laser output in ZBLAN fluoride fiber, and then researchers successively obtained nearly 10 watts and 24 wat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/23C03C4/12
Inventor 郭艳艳张军杰马瑶瑶黄飞飞张丽艳胡丽丽
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com