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Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition

A zinc oxide nanowire and chemical vapor deposition technology, which is applied in the field of preparation of zinc oxide nanowire arrays

Inactive Publication Date: 2013-04-24
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can increase the length of ZnO nanowire arrays, the length of nanowires prepared by vapor phase growth is only a few microns, and the total length of nanowire arrays has not been significantly improved.
Moreover, there are metal particles attached to the top of the prepared nanowires, which will affect the performance of the nanowire array to a certain extent.

Method used

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  • Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition
  • Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition
  • Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition

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Embodiment 1

[0028] Example 1: Preparation of double-layer ZnO nanowire array

[0029] Concrete preparation steps of the present invention are as follows:

[0030] (1) Put the silicon wafer N(100) polished on one side into ethanol and acetone solutions and ultrasonically for 0.5 hours each to remove organic matter on the surface of the silicon wafer, and then put it into a mixed solution of concentrated sulfuric acid and hydrogen peroxide (volume ratio 3:1) , Heated at 80°C for 1 hour to remove oxides and metal impurities on the silicon surface. Put the treated silicon wafer into ultrapure water for 0.5 hours and ultrasonically remove the residual acid on the surface;

[0031] (2) Weigh 0.1098 g of zinc acetate dihydrate and add it to 25 mL of ethanol solution, stir until completely dissolved. Spin-coat the zinc acetate ethanol solution on the silicon wafer several times, and dry it in a 100°C drying oven for 20 minutes after each spin-coating;

[0032] (3) Weigh 0.5 g of graphite powde...

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Abstract

The invention relates to a preparation method of a double-layer zinc oxide nanowire array. The method comprises the following steps: by using a silicon wafer coated with a zinc oxide crystal seed layer as a substrate, inducing growth of a ZnO nanowire array by chemical vapor deposition; and spin-coating a ZnO nano crystal seed layer on the top end of the primarily grown ZnO nanowire to carry out gas-phase secondary growth of the ZnO nanowire array, thereby obtaining the double-layer superlong ZnO nanowire array. The method has the advantage of simple preparation process; and the prepared double-layer ZnO nanowire array has the advantages of obviously higher length-to-diameter ratio, small starting electric field, and obviously enhanced field emission properties.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide nanowire array, in particular to a preparation method of a double-layer zinc oxide nanowire array. Background technique [0002] As a wide-bandgap semiconductor material, ZnO has a high electron-hole binding energy (60 meV), and is widely used in electronic devices, optical devices, optoelectronic devices, lasers, light-emitting diodes and other fields. The piezoelectric and pyroelectric properties of ZnO make it have great application prospects in sensors, generators, and photocatalytic hydrolysis for hydrogen production. At the same time, ZnO is also a green material, which has biocompatibility, biodegradability and non-toxic properties, so it can be used in the fields of medicine and environmental science. The one-dimensional ZnO nanowire structure has the same importance as the one-dimensional silicon nanostructure, and it is playing an increasingly critical role in the development of n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/03C04B41/50B82Y30/00
Inventor 李珍李翠林栋康维君潘登余吴明红
Owner SHANGHAI UNIV
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