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Array substrate, manufacture method of array substrate, liquid crystal display panel and display device

A technology of an array substrate and a manufacturing method, applied in the field of liquid crystal display, to achieve the effects of increasing the turn-on current, increasing Ion, and reducing the channel length

Inactive Publication Date: 2015-04-01
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, the source electrode and the drain electrode are located on the same layer and are formed at the same time through a single patterning process. Due to the constraints of the critical dimension accuracy of the mask, the minimum channel length in the existing process can only be 3.5um. How to reduce the Small channel lengths have become improved I on a bottleneck of

Method used

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  • Array substrate, manufacture method of array substrate, liquid crystal display panel and display device
  • Array substrate, manufacture method of array substrate, liquid crystal display panel and display device
  • Array substrate, manufacture method of array substrate, liquid crystal display panel and display device

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Embodiment 1

[0143] In this embodiment, the source electrode and the drain electrode are located in different layers, and are formed separately through two patterning processes, wherein the source electrode is formed first and then the drain electrode is formed, as Figure 2-11 As shown, the manufacturing method of the array substrate of this embodiment includes the following steps:

[0144] Step a1: provide a substrate 1, and form a pattern of gate electrodes and gate lines composed of a gate metal layer 2 on the substrate 1 through the first patterning process;

[0145] Specifically, the substrate 1 may be a transparent substrate. Such as figure 2 As shown, a gate metal layer 2 is first deposited on a substrate 1, and then patterns of gate electrodes and gate lines are formed through a first patterning process. Specifically, a gate metal layer 2 can be deposited on the substrate 1 by magnetron sputtering, wherein the gate metal layer 2 can be any one of Nd, Cr, W, Ti, Ta, Mo, Al and C...

Embodiment 2

[0165] In this embodiment, the drain electrode and the source electrode are located in different layers, and are respectively formed through two patterning processes, wherein the drain electrode is formed first and then the source electrode is formed. The manufacturing method of the array substrate of this embodiment includes the following steps:

[0166] Step b1: provide a substrate, and form a pattern of gate electrodes and gate lines consisting of a gate metal layer on the substrate through the first patterning process;

[0167] Specifically, the substrate may be a transparent substrate. A gate metal layer is first deposited on the substrate, and then patterns of gate electrodes and gate lines are formed through the first patterning process. Specifically, a gate metal layer can be deposited on the substrate by magnetron sputtering, wherein the gate metal layer can be any one of Nd, Cr, W, Ti, Tb, Mo, Bl and Cu or at least two of them Metal alloy; after that, a photoresist ...

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Abstract

The present invention relates to an array substrate and a manufacture method of the same, a liquid crystal display panel, and a display device, which are relative to a liquid crystal display field. Further, source electrodes and drain electrodes of the array substrate are arranged on different layers. In the manufacture method of the array substrate, the source electrodes and the drain electrodes are formed on different layers by two patterning processes. According to the technical scheme of the present invention, a length of a channel between the source electrodes and the drain electrodes can be decreased as much as possible, thereby increasing a start current Ion of a TFT.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to an array substrate and a manufacturing method thereof, a liquid crystal display panel and a display device. Background technique [0002] Turn on current I on It is the most important parameter in TFT-LCD (thin film transistor-liquid crystal display), and its size directly affects the display quality of TFT-LCD. At present, since TFT-LCD is developing towards high refresh rate and high resolution, this requires TFT to have a relatively high turn-on current I on . For a-Si TFT, increase the turn-on current I on The main way is to increase the width-to-length ratio (W / L) of the channel. [0003] In the prior art, the source electrode and the drain electrode are located on the same layer, and are formed simultaneously through a single patterning process. Due to the constraints of the critical dimensional accuracy of the mask, the minimum channel length in the existing proce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1368G02F1/1362H01L21/77
CPCH01L29/66765H01L29/41733H01L29/78669
Inventor 张春芳金熙哲魏燕徐超
Owner BOE TECH GRP CO LTD
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