Plastic substrate surface processing method for obtaining self cleaning function

Abstract

The invention discloses a plastic substrate surface processing method for obtaining the self cleaning function, relates to a plastic surface processing method, and provides a surface processing method, which enables the plastic substrate surface to obtain water electrodeposited chromium metal appearance and texture as well as photochemical catalysis bacteria restraining and self cleaning functions, has an environmental-friendly whole process procedure and is free of hexavalent chromium pollution and damage. The method comprises the following steps: 1) removing oil on the plastic substrate surface; 2) spraying a paint layer on the plastic substrate treated in the step 1); 3) performing plasma modification to the plastic substrate, treated in the step 2), by means of physical vapor deposition, and then applying a metal layer on the plastic substrate by means of physical vapor deposition chromium; 4) performing normal-pressure plasma glowing treatment so as to enable the metal chromium layer surface of the plastic substrate to obtain hydrophilicity; and 5) performing liquid deposition to the plastic substrate treated in the step 4) to obtain a nano anatase type titanium dioxide transparent film.

Description

Technical field [0001] The invention relates to a plastic surface treatment method, in particular to a surface treatment method with a photocatalytic self-cleaning function on the surface of a plastic substrate, which can be applied to the fields of sanitary ware, automobiles, household appliances and the like. Background technique [0002] Liquid-Phase Deposition (LPD) is subordinate to the liquid phase epitaxy technology of semiconductor growth process. Growing SiO using LDP process 2 It is a newly developed technology. The solution is a supersaturated fluorosilicic acid solution, which uses the following reaction with water: H 2 SiF 6 +H 2 O→SiO 2 +6HF According to the above reaction, when H 2 SiF 6 The concentration, H 2 SiO occurs when the content of O increases or the concentration of HF decreases 2 Of deposition. At present, it has been adopted to add H to the solution 3 BO 3 , Al or water to speed up SiO 2 Of deposition. The deposition rate is 0.001~0.007nm / s, depending...

AI Technical Summary

Problems solved by technology

Compared with other oxide processes, LPD has its own advantages: low temperature, low cost, diversity of substrates, etc.; the overall quality of the oxide film generated by thermal oxidation is better, but the thermal stress caused by higher oxidation temperature will also cause defects The existence of the state; the existence of the current path in the electrochemical deposition process leads to poor compactness and looseness of the film, etc.