Cadmium telluride nanowire and preparation method thereof

A technology of cadmium telluride and nanowires, which is applied in the field of nanowires, can solve the problems of rough surface of cadmium telluride nanowires, affecting the control of photoelectric conversion, complicated liquid phase method, etc., and achieves good application development prospects and easy experimental process. Good control and shape

Active Publication Date: 2013-03-06
KUANG CHI INST OF ADVANCED TECH +1
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  • Application Information

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Problems solved by technology

The process of the liquid phase method is complicated and the surface of the cadmium telluride nanowires prepared by the liquid phase method is rough and difficult to control. Therefore, the cadmium telluride nanowires prepared by the liquid phase method greatly affect the control of its photoelectric conversion
There are many variable factors in the vapor phase deposition method, but the cadmium telluride nanowires prepared by the vapor phase deposition method are relatively smooth, because the growth conditions of the cadmium telluride nanowires are quite strict, especially when the catalyst is melted into small droplets at high temperature. Steps are the most critical, so there are very few examples of successful preparation of CdTe nanowires by vapor phase deposition. easy to accomplish

Method used

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  • Cadmium telluride nanowire and preparation method thereof
  • Cadmium telluride nanowire and preparation method thereof

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Embodiment 1

[0029] A preparation process of cadmium telluride nanowires is:

[0030] S1. Processing substrate: Wash 4A zeolite 12 in ultrasonic waves with acetone, alcohol, and deionized water for ten minutes, place in a vacuum drying oven to dry thoroughly after washing, and coat a layer of gold film on the surface of 4A zeolite 12. The processed 4A zeolite 12 is stored in a dry box;

[0031] S2. Place the quartz tube 1 horizontally in a high-temperature tube furnace, take 10g of pure cadmium telluride powder 11 and place it at the upper tuyere of the airflow, and place the treated 4A zeolite 12 at the lower tuyere of the airflow;

[0032] S3. Evacuate the high-temperature tube furnace, inject argon gas for three times, and control the air pressure in the high-temperature tube furnace to 1×10 -4 torr;

[0033] S4. Continue to feed argon, the flow rate of argon is controlled at 20sccm, the pressure in the high temperature tube furnace is adjusted to 0.15atm, the temperature of the heati...

Embodiment 2

[0039] Sometimes, in order to make the choice of cadmium telluride nanowire substrates wider and the preparation process easier to operate, natural mordenite can be used as the substrate and bismuth film as the catalyst. The specific process is as follows:

[0040] S1. Process the base material: wash the natural mordenite 12 with acetone, alcohol, and deionized water in ultrasonic waves for ten minutes, place it in a vacuum drying oven to dry thoroughly after washing, and coat a layer of bismuth film on the surface of the natural mordenite 12 , the processed natural mordenite 12 is stored in a dry box;

[0041] S2. Place the quartz tube 1 horizontally in a high-temperature tube furnace, take 10g of pure cadmium telluride powder 11 and place it at the upper tuyere of the airflow, and place the treated natural mordenite 12 at the lower tuyere of the airflow;

[0042] S3. Evacuate the high-temperature tube furnace, inject argon gas for three times, and control the air pressure in...

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Abstract

The invention provides a preparation method of a cadmium telluride nanowire, which comprises the following steps: S1. substrate processing: washing and drying zeolite, plating a metal film on the zeolite surface, and storing the treated zeolite in a drying box; S2. horizontally putting a quartz tube in a high-temperature pipe furnace, putting pure cadmium telluride powder at an air flow upwind port, and putting the treated zeolite at an air flow downwind port; S3. vacuumizing the high-temperature pipe furnace, and introducing inert gas to perform gas washing; S4. continuing introducing the inert gas, and heating the cadmium telluride powder and zeolite; and S5. continuing introducing the inert gas, and cooling the cadmium telluride powder and zeolite to room temperature together so that the generated cadmium telluride nanowire is attached to the zeolite surface. The method provided by the invention has the advantages of strong operability, low requirements for experimental equipment, and controllable experimentation process; and the cadmium telluride nanowire prepared by the method has the advantages of smooth surface and favorable shape, thereby having favorable application prospects.

Description

【Technical field】 [0001] The invention relates to the field of nanowires, in particular to a preparation method of cadmium telluride nanowires. 【Background technique】 [0002] Nanowire is a one-dimensional material whose two-dimensional (horizontal) length is limited to less than 100 nanometers, and one-dimensional (longitudinal) is relatively infinite, and has significantly different electrical and optical properties from its bulk. Cadmium telluride is a II-VI semiconductor compound that can produce a good photoresponse to visible light and plays an important role in photoelectric conversion applications such as solar power generation, infrared detection, and X-ray detection. The cadmium telluride nanowire prepared by using cadmium telluride as a raw material can be used to make a nanometer device capable of realizing infrared detection of a single nanowire. The photonic circuit composed of nano-devices with excellent performance can be used to manufacture the most develop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00
Inventor 刘若鹏赵治亚缪锡根熊晓磊
Owner KUANG CHI INST OF ADVANCED TECH
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