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AlGaN/GaN heterojunction enhanced device and manufacturing method thereof

A manufacturing method and enhanced technology, applied in the field of microelectronics, can solve problems such as poor process repeatability and poor voltage uniformity, and achieve the effects of good controllability, increased forward threshold voltage, and reduced two-dimensional electron gas density

Active Publication Date: 2013-02-20
云南凝慧电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to address the shortcomings of the above enhanced devices, to provide an AlGaN / GaN heterojunction enhanced device and its manufacturing method, so as to solve the problems of poor uniformity of threshold voltage and poor process repeatability of current enhanced high electron mobility transistors , to manufacture devices with stable uniformity and repeatability, meeting the application requirements of GaN-based electronic devices in the fields of high-voltage switches and digital circuits

Method used

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  • AlGaN/GaN heterojunction enhanced device and manufacturing method thereof
  • AlGaN/GaN heterojunction enhanced device and manufacturing method thereof

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Embodiment 1

[0033] The manufacture of the device of the present invention includes the following steps:

[0034] step 1. Epitaxial material growth.

[0035] 1.1) On the SiC substrate, use the MOCVD process to grow the intrinsic GaN layer;

[0036] 1.2) On the intrinsic GaN layer, grow an 8nm thick AlGaN barrier layer, in which the Al composition is 35%,

[0037] A 2DEG is formed at the contact position between the intrinsic GaN layer and the AlGaN barrier layer to obtain a sample with epitaxial material.

[0038] Step 2. Made of NiO under the gate.

[0039] 2.1) Use PECVD790 deposition equipment to deposit SiN on the AlGaN barrier layer, and deposit SiN with a thickness of 50 nm;

[0040] 2.2) SiN gate trench etching;

[0041] First, slant the glue on the surface of the epitaxial material at a speed of 5000 rpm to obtain a photoresist mask with a thickness of 0.8 μm, and then bake it in a high-temperature oven with a temperature of 80 ° C for 10 minutes, and then use the NSR1755I7A ...

Embodiment 2

[0065] Step 1. On the SiC substrate, use the MOCVD process to grow an intrinsic GaN layer; then on the intrinsic GaN layer, grow an AlGaN barrier layer with a thickness of 12 nm and an Al composition of 30%, and on the intrinsic GaN layer. A 2DEG is formed at the contact position with the AlGaN barrier layer, and a sample with epitaxial material is obtained.

[0066] Step 2, making NiO under the gate.

[0067] 2a) Using PECVD790 deposition equipment to deposit a 100nm SiN layer on the AlGaN barrier layer;

[0068] 2b) Spin the glue on the surface of the epitaxial material at a speed of 5000 rpm to obtain a photoresist mask with a thickness of 0.8 μm, and then bake it in a high temperature oven with a temperature of 80 ° C for 10 minutes, and obtain it by lithography using an NSR1755I7A lithography machine. Gate electrode pattern; then use ICP98c inductively coupled plasma etcher to etch and remove the 100nm thick SiN layer in the gate area at an etching rate of 0.5nm / s to for...

Embodiment 3

[0077] step a. Epitaxial material growth.

[0078] A1) On the sapphire substrate, use the MOCVD process to grow the intrinsic GaN layer;

[0079] A2) On the intrinsic GaN layer, grow a 16nm thick AlGaN barrier layer, in which the Al composition is 25%,

[0080] A 2DEG is formed at the contact position between the intrinsic GaN layer and the AlGaN barrier layer to obtain a sample with epitaxial material.

[0081] Step B. Made of NiO under the grid.

[0082] B1) Deposit SiN on the AlGaN barrier layer using PECVD790 deposition equipment, and deposit SiN with a thickness of 200nm;

[0083] B2) SiN gate groove etching;

[0084] First, the positive resist was cast on the surface of the epitaxial material at a speed of 5000 rpm to obtain a photoresist mask with a thickness of 0.8 μm, and then baked in a high-temperature oven at a temperature of 80°C for 10 minutes, and then photolithography was carried out using an NSR1755I7A photolithography machine. Obtain the gate electrode ...

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Abstract

The invention discloses a method for manufacturing an AlGaN / GaN heterojunction enhanced high-electron-mobility transistor. The method is mainly used for solving the problem that the current enhanced high-electron-mobility transistor is poor in threshold voltage uniformity and process repeatability. The method comprises the following manufacturing processes of: (1) growing AlGaN / GaN heterojunctions on a SiC or sapphire substrate, wherein the thickness of an AlGaN barrier layer is 8-16 nm, and the content of the component Al is 25-35%; (2) depositing a SiN layer on the surface of the AlGaN barrier layer so as to cover the AlGaN barrier layer, and carrying out grid groove etching so as to expose a grid area; (3) depositing metal Ni on the surface of the AlGaN barrier layer on which the grid area is exposed; (4) carrying out high-temperature heat treatment in an oxygen environment at the temperature of 800-860 DEG C by adopting a rapid thermal annealing furnace so as to form a NiO layer; and (5) carrying out active-area mesa isolation on the AlGaN barrier layer so as to finish source and drain ohmic contact electrodes, and manufacturing a grid electrode on the NiO layer. The method has the advantages of high device threshold voltage, low grid leakage current, simple manufacturing processes, and high process repeatability and controllability, and can be applied to high-working-voltage enhanced AlGaN / GaN heterojunction high-voltage switches and the basic units of GaN-based combinational logic circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the fabrication of semiconductor devices, in particular to an AlGaN / GaN heterojunction enhanced device and a fabrication method, which can be used to fabricate enhanced high electron mobility transistors. Background technique [0002] In recent years, the third-bandgap semiconductors represented by SiC and GaN have the characteristics of large band gap, high breakdown electric field, high thermal conductivity, high saturation electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. It has received extensive attention. In theory, devices such as high electron mobility transistors (HEMTs), light-emitting diodes (LEDs), and laser diodes (LDs) made of these materials have obvious superior characteristics than existing devices. Therefore, in recent years, researchers at home and abroad have conducted extensive and in-depth resear...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06H01L29/423H01L21/335H01L21/28
Inventor 王冲郝跃何云龙郑雪峰马晓华张进城
Owner 云南凝慧电子科技有限公司
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