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Praseodymium-doped yttrium lithium fluoride crystal growth method

A technology of crystal growth and praseodymium yttrium fluoride, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small size, difficulty in realizing industrial production, poor integrity of crystal growth, etc., and achieve high yield and realize Industrialized production, the effect of large crystal size

Inactive Publication Date: 2013-02-13
合肥嘉东光学股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Pr:YLF is a tetragonal scheelite structure. YLF will not be damaged by light under strong ultraviolet light irradiation. It is doped with praseodymium ions to realize laser transition at room temperature. The emitted laser wavelength is 607nm and 640nm. At present, crucible is used in China. It is prepared by the descending method, through resistance heating, melting the mixed raw materials in the crucible, and growing crystals in a certain direction through operations such as planting, necking, and equal diameters, but the Pr:YLF prepared by the crucible descending method is prone to cracking, crystals Poor growth integrity, small size, difficult to achieve industrial production

Method used

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  • Praseodymium-doped yttrium lithium fluoride crystal growth method

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Embodiment 1

[0018] Embodiment 1: the present embodiment carries out as follows:

[0019] 1. PrF with a purity greater than 99.99% and a molar ratio of 0.02:1:0.98 3 and LiF, YF 3 After the powder is mixed, it is put into a platinum crucible with a thickness of 0.5mm with the YLF single crystal in the A direction.

[0020] 2. Put the platinum crucible into the single crystal furnace, raise the temperature to 300°C for 2 hours, then pass nitrogen into the single crystal furnace, and continue to heat up until the raw materials are completely melted.

[0021] 3. When the raw material is completely melted, control the furnace temperature at 600°C, and then use YLF single crystal to plant at a speed of 10cm / h, open-type pulling with a growth temperature gradient of 60°C / cm and a rising speed of 0.5mm / h The Pr:YLF crystals were obtained by growing yttrium-doped lithium fluoride with a growth period of 10 days. The measured crystal density is 3.99g / cm 3 , melting point 980°C. Mohs hardness 4...

Embodiment 2

[0022] Embodiment 2: the present embodiment carries out as follows:

[0023] 1. PrF with a purity greater than 99.99% and a molar ratio of 0.02:1:0.98 3 and LiF, YF 3 After the powder is mixed, it is put into a platinum crucible with a thickness of 0.8mm with the YLF single crystal in the A direction.

[0024] 2. Put the platinum crucible into the single crystal furnace, raise the temperature to 300°C for 2 hours, then pass nitrogen into the single crystal furnace, and continue to heat up until the raw materials are completely melted.

[0025] 3. When the raw material is completely melted, control the furnace temperature at 1000°C, and then use YLF single crystal to plant at a speed of 10cm / h, open-type pulling with a growth temperature gradient of 90°C / cm and a rising speed of 0.5mm / h The Pr:YLF crystals were obtained by growing yttrium-doped lithium fluoride with a growth period of 10 days. The measured crystal density is 3.99g / cm 3 , melting point 980°C. Mohs hardness ...

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Abstract

The invention discloses a praseodymium-doped yttrium lithium fluoride crystal growth method, and relates to the technical field of single crystal growth. The method comprises the steps of placing mixing powder body of praseodymium fluoride (prF3), lithium fluoride (LiF) and yttrium fluoride (YE3), and seed crystal into a platinum crucible, placing the platinum crucible into a single crystal furnace, adding nitrogen into the single crystal furnace, and growing praseodymium-doped yttrium lithium fluoride single crystal by means of an open-type czochralski method. The method is little in volatile matter during a crystal growth process, good in integrity of grown crystal, bubble-free and inclusion-complex-free, high in finished product rate, large in crystal size, not prone to cracking, simple in process equipment, low in energy consumption, and beneficial for industrial production.

Description

Technical field: [0001] The invention relates to the technical field of single crystal growth, in particular to a crystal growth method of praseodymium-doped yttrium lithium fluoride. Background technique: [0002] Pr:YLF is a tetragonal scheelite structure. YLF will not be damaged by light under strong ultraviolet light irradiation. It is doped with praseodymium ions to realize laser transition at room temperature. The emitted laser wavelength is 607nm and 640nm. At present, crucible is used in China. It is prepared by the descending method, through resistance heating, melting the mixed raw materials in the crucible, and growing crystals in a certain direction through operations such as planting, necking, and equal diameters, but the Pr:YLF prepared by the crucible descending method is prone to cracking, crystals Poor growth integrity and small size make it difficult to realize industrial production. Invention content: [0003] In order to overcome the shortcomings of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B15/00
Inventor 王冬胡卫东
Owner 合肥嘉东光学股份有限公司
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