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Ytterbium-doped molybdic acid gadolinium barium potassium laser crystal and preparation method thereof

A technology of ytterbium gadolinium molybdate barium and laser crystals, which is applied in the field of optoelectronic functional materials, can solve the problems of unsatisfactory overall performance and low energy utilization rate of glass materials, and achieve excellent optical properties, good mechanical properties, and simple growth process.

Inactive Publication Date: 2013-01-16
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

Although the pulse width achieved by the ytterbium-doped glass material has a shorter pulse output than that of the ytterbium-doped crystal, the energy utilization rate of the glass material is very low, and the overall performance is not ideal.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0023] Example 1: with K 2 Mo 2 o 7 The doping concentration for flux growth is 15at.% Yb 3+ Yb 3+ : KBaGd(MoO 4 ) 3 laser crystals.

[0024] Using the flux method, the raw materials weighed according to the ratio are fully ground and evenly put into a φ60×50mm platinum crucible. The molar ratio of the raw materials to the flux is: KBaGd(MoO 4 ) 3 : K 2 Mo 2 o 7 =1:4 (molar ratio), doped with 15at% Yb 2 o 3, and about 2at% of KF was added as an additive to improve the environment for crystal growth and reduce viscosity. The mixed raw materials are heated to about 50 degrees above the saturation point temperature in a molten salt furnace, and the temperature is kept constant for one day. The crystal growth temperature is between 915→930°C, with a cooling rate of 1°C / day and a crystal rotation speed of 10 revolutions / min, a size of 50×40×9mm is grown. 3 The better quality of Yb 3+ : KBaGd(MoO 4 ) 3 crystals. The ICP (plasma emission spectrometry) analysis shows...

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Abstract

The invention provides an ytterbium-doped molybdic acid gadolinium barium potassium laser crystal and a preparation method thereof. The laser crystal belongs to monoclinic systems, the space group is C2 / m, the cell parameters are as follows: a equal to 17.401 (11) ., b equal to 12.226 (8) ., c equals to 5.324(4) ., Beta equals to 106.19 (1) degree, V equals to 1087.73(373) .<3>, Z equals to 4, and D equals to 4.967 g.cm<3>. The crystal is grown by adopting the flux growth method. The crystal indicates a wider absorption spectrum band and an emission spectrum band. The absorption section of the absorption spectrum band at the 976 nm position is 1.69*10<-20> cm<2>, and the absorption half-peak width is 60 nm. The emission section at the position of about 1010 nm is larger than 3*10<-20> cm<2>. The crystal can become a novel ultrashort pulse laser crystal and can be applied practically.

Description

technical field [0001] The invention relates to the technical field of optoelectronic functional materials, in particular to a laser crystal material as a solid-state laser working material with a wide absorption band and suitable for InGaAs diode laser pumping. Background technique [0002] Since T. H. Maiman of the United States invented the world's first laser with artificial ruby ​​crystals in the laboratory in 1960, all-solid-state lasers have developed rapidly. And in 1961 for the first time in CaF 2 :Sm 3+ The laser output achieved in the crystal has opened the prelude to the vigorous study of trivalent rare earth ions as active ions for stimulated emission in solid-state laser crystals. By the middle of the 1980s, with the rapid development of semiconductor diodes, the diode laser (LD) developed with its excellent performance was used as a new pump source to replace the traditional flash lamp pump source, and was widely introduced into lasers, greatly It improves...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B9/12
Inventor 王国富余意林州斌张莉珍黄溢声
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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