Device for growing tellurium-zinc-cadmium crystals by traveling heater method

Abstract

The invention discloses a device for growing tellurium-zinc-cadmium crystals by a traveling heater method, which is provided with a high-frequency electromagnetic induction heater and upper and lower resistance heating furnaces, wherein the upper and lower resistance heating furnaces form a holding zone at an intermediate heating section of a growth furnace body; a servo rotating mechanism drives an aluminum oxide support bar to drive a quartz material pipe to rotate; a servo linear motion mechanism drives the growth furnace body to make an up-and-down motion in the vertical direction; a control system controls output power of the high-frequency electromagnetic induction heater and the upper and lower resistance heating furnaces, and also controls the servo rotating mechanism, so that the tellurium-zinc-cadmium crystal growth material is positioned at the intermediate heating section of the growth furnace body; and the control system controls the servo linear motion mechanism to ascend at uniform speed, and also controls the servo rotating mechanism, so that the quartz material pipe rotates at uniform speed. The device disclosed by the invention can lower the crystal growth temperature, and reduces the impurity contamination; and the existence of the zone melting process has a purification action on the crystals, thereby finally acquiring the high-purity tellurium-zinc-cadmium crystals which completely conform to the requirements as a detector material.

Description

technical field [0001] The invention relates to a crystal preparation device, in particular to a cadmium zinc telluride crystal preparation device, which can be used to obtain high-purity cadmium zinc telluride crystals and prepare special crystal materials that meet the level requirements of detectors. Background technique [0002] Since CdZnTe (CZT) has a higher average atomic number and a larger forbidden band width, the CZT detector has a larger absorption coefficient and a higher count rate, especially at room temperature without any cooling equipment. Work, so it is smaller and more convenient to use. At present, the wide application of CZT detectors is mainly limited by several aspects such as crystal performance, volume and cost. The preparation method of crystals is mainly to grow CZT crystals by high-voltage Bridgman method or improved vertical Bridgman method. [0003] However, in order to obtain high-resistance crystals, these two methods are usually implemented...

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Problems solved by technology

But the deep energy levels are traps and recombination centers, such as the introduced deep energy level density is greater than 10 13 / cm3, will greatly reduce the value of μτ (the product of carrier lifetime and mobility)

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