Silicon-based near-infrared quantum-dot electroluminescent device and preparation method thereof

Abstract

A silicon-based near-infrared quantum-dot electroluminescent device comprises a substrate, an oxidation layer, a light-emitting layer, an electron transporting layer and a metal electrode, wherein the oxidation layer which is a silicon dioxide film is prepared on the substrate and is used for balancing electron and hole injection by means of voltage sharing; the light-emitting layer is prepared on the oxidation layer and is composed of near-infrared light-emitting colloidal quantum dots; the electron transporting layer is prepared on the light-emitting layer and can transport electrons and improve carrier injection efficiency; and the metal electrode is prepared on the electron transporting layer and used for injecting electrons into the light-emitting layer. Each of the substrate, the oxidation layer, the light-emitting layer, the electron transporting layer and the metal electrode is of a planar waveguide structure or a ridge waveguide structure, the substrate of the ridge waveguide structure is convex, a boss is arranged in the middle of the substrate, and the oxidation layer, the light-emitting layer, the electron transporting layer and the metal electrode are all prepared on the boss of the substrate. The silicon-based near-infrared quantum-dot electroluminescent device is tunable in light-emitting frequency, and the preparation method is available to materials, low in production cost and simple in process.

Description

technical field [0001] The invention relates to an electroluminescence device, in particular to a near-infrared quantum dot electroluminescence device on a silicon base and a preparation method thereof. Background technique [0002] Silicon (Si) is an important semiconductor integrated circuit material, but because silicon is an indirect bandgap material, the luminous efficiency is low. Research work on materials and devices, such as integrating III-V light-emitting materials on silicon substrates, or making porous silicon, etc. Silicon-based near-infrared light source is expected to be used in optical communication, combined with mature CMOS technology, as a light source for optoelectronic integration or even all-optical communication. [0003] Colloidal quantum dots are a new type of quantum dot material, which are crystal particles with a particle size of nanometer scale, which can be synthesized by chemical methods. Therefore, unlike the quantum dots obtained by tradit...

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Problems solved by technology

[0002] Silicon (Si) is an important semiconductor integrated circuit material, but because silicon is an indirect bandgap material, the luminous efficiency is low. Research work on materials and devices, such as integrating III-V light-emitting materials on silicon substrates, or making porous silicon, etc.

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