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Suede preparation method of metallurgical-grade single crystal and mono-like silicon

A kind of monocrystalline silicon-like, metallurgical grade technology, applied in the field of suede preparation of silicon wafers, can solve the problems of difficulty in making suede, process pollution, pollution of the suede groove, etc., to achieve uniform suede effect, reduce low energy potential points, The effect of improving surface uniformity

Inactive Publication Date: 2012-12-05
上澎太阳能科技(嘉兴)有限公司
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Problems solved by technology

[0006] Therefore, due to the high impurity content of metallurgical silicon wafers and the high unmeasurable factors of the surface condition itself, there are often pollutions of various substances including carbon, oxygen, nitrogen and even various metal ions and particles containing the above substances. These pollution and If the impurities are not pre-treated by effective methods, it is difficult to make a good suede surface by using the traditional process directly, and it will even pollute the velvet tank, resulting in process pollution

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  • Suede preparation method of metallurgical-grade single crystal and mono-like silicon
  • Suede preparation method of metallurgical-grade single crystal and mono-like silicon
  • Suede preparation method of metallurgical-grade single crystal and mono-like silicon

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Embodiment Construction

[0029] The present invention will be further described in detail through the following examples, but the examples are not intended to limit the protection scope of the present invention.

[0030] refer to figure 1 The method for preparing the textured surface of metallurgical grade single crystal and single crystal silicon of the present invention includes a pretreatment process and a conventional texturing process. The silicon wafer is a metallurgical grade silicon wafer with high impurity content and serious surface pollution.

[0031] The preprocessing process is performed first.

[0032] (1) Configure the pretreatment solution. The pretreatment solution is composed of potassium hydroxide with a mass percentage concentration of 0.5%-10%, hydrogen peroxide water with a mass percentage concentration of 2.5%-8%, and deionized water with a mass percentage concentration of 82%-97%.

[0033] (2) Carry out the pretreatment process. Place the silicon wafer to be textured after ...

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Abstract

The invention relates to a suede preparation method of metallurgical-grade single crystal and mono-like silicon. The method comprises a conventional felting process, and the method also comprises a pretreatment process before the conventional felting process. The pretreatment process is set before the conventional felting process, alkali materials and oxides are added, so that the obtained suede effect is uniform and clear, the reflecting rate can be dropped from 14 percent to 8 percent, and the uniformity of the reflection rate of a complete silicon sheet can reach plus / minus 2 percent for the metallurgical-grade single crystal and the mono-like silicon with high content of impurities and complicated surface conditions.

Description

technical field [0001] The invention relates to a method for preparing a textured surface of a silicon wafer, and more particularly, to a method for preparing a textured surface of metallurgical-grade single crystal and quasi-single crystal silicon. Background technique [0002] Texturing is an important factor affecting solar efficiency in solar cells. The texturing of solar cells is to produce anisotropic corrosion on the surface of silicon wafers through chemical reactions to form dense micro-pyramidal textured surfaces, so that solar cells can minimize light reflectivity and improve photoelectricity. conversion efficiency. Therefore, texture can effectively reduce the reflection of silicon wafers on sunlight and increase the absorption of incident light by silicon wafers, thereby improving cell efficiency. [0003] In large-scale industrial production at present, generally adopt lower cost sodium hydroxide or potassium hydroxide dilute solution (concentration is 1%~2%)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 杨华余义宋光华李庄
Owner 上澎太阳能科技(嘉兴)有限公司
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