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Method for producing rear passivation double-sided solar cell

A double-sided solar cell, backside passivation technology, applied in the direction of circuits, electrical components, final product manufacturing, etc., can solve the problems of limiting the improvement of solar cell efficiency, low cell efficiency, low reflection, etc., to reduce the recombination rate, The effect of good industrial prospects and large production capacity

Inactive Publication Date: 2012-11-28
TIANWEI NEW ENERGY HLDG +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the aluminum back field has the characteristics of high recombination and low reflection, which limits the improvement of the efficiency of commercial solar cells, so some high-efficiency crystalline silicon cells with rear passivation have appeared
[0003] In the existing technology, the production method of solar cells is simple and the production capacity is large, but the efficiency of the cells is not high

Method used

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  • Method for producing rear passivation double-sided solar cell

Examples

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Embodiment 1

[0051] Such as figure 1 shown. The steps to realize the present invention can be sequentially as follows: pre-cleaning, texturing→diffusion PN junction→peripheral and backside etching→evaporating SiNx anti-reflection film on the front→evaporating Al on the backside 2 o 3 Passivation film or / and SiNx passivation film or other passivation film → screen printing back electrode → screen printing positive electrode → sintering.

[0052] That is, a method for producing a back passivated double-sided solar cell,

[0053] Generally, it includes the following steps;

[0054] Step 1: Perform pre-cleaning and texturing on the silicon wafer; pre-cleaning is based on removing the damaged layer on the surface of the silicon wafer, and at the same time make a textured surface on the front surface of the battery;

[0055] Step 2: using the above-mentioned silicon wafer as the silicon substrate to deposit a dopant source and perform diffusion to prepare a p-n junction;

[0056] Step 3: Po...

Embodiment 2

[0094] The difference between this example and Example 1 is: firstly, the P silicon wafer is cleaned and textured with a chemical solution, and the damaged layer is removed to form a textured anti-reflection structure; in the diffusion furnace tube, a liquid source of phosphorus oxychloride is used Diffusion to form a P-N junction; use an acid or alkali chemical solution to clean the back junction and surrounding areas, and use a mixed solution of hydrochloric acid, hydrofluoric acid and water to clean the phosphosilicate glass; on the front of the battery, PECVD prepares a silicon nitride film anti-reflection film; On the back of the battery, PECVD prepares aluminum oxide / silicon nitride laminated passivation film;

[0095] Then screen-print grid lines, including back busbars and fine grid lines, and print back bus grids and print fine grid lines at the same time. Both the back bus grid and printed fine grid lines are printed with penetrating silver-aluminum paste to form a pe...

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Abstract

The invention discloses a method for producing a rear passivation double-sided solar cell. The method sequentially comprises the following steps of: positive cleaning, making a texture surface, forming a PN junction through diffusion, performing periphery and rear etching, evaporating a positive SiNx anti-reflection film, evaporating a rear passivation film or / and SiNx [11] passivation film or other passivation films, performing screen printing on a back electrode, performing screen printing on a positive electrode, and sintering. The method for producing the rear passivation double-sided solar cell has the advantages that the compounding rate of the rear surface can be greatly reduced, the back reflection is improved, and the more photon-generated carriers are collected. Compared with processes such as photoetching, laser sintering and laser opening, the method is simple in process flow and suitable for mass production. The actual working and generating efficiency can be effectively improved. The used equipment is compatible with the traditional solar cell equipment, the equipment does not need to be increased, the process cost is low, the capacity is high, and the method has good industry prospects.

Description

technical field [0001] The invention relates to the production of a double-sided solar cell, in particular to a production method of a back passivated double-sided solar cell. Background technique [0002] The back of commercial solar cells needs screen printing aluminum paste, and after high temperature sintering, a layer of P is formed on the back. + The dense diffusion layer, and the substrate P - form P + P - structure, which generates a built-in electric field with the same direction as the built-in electric field of the pn junction and a weaker electric field, which plays a role of back reflection on the minority carrier electrons in the base region, reducing the diffusion and recombination loss to the back surface, so P + P - The structure can improve the photogenerated voltage and short-circuit current. In addition, the aluminum back field also has a gettering effect, which can get rid of impurities and defects in the body. However, the aluminum back field has ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 路忠林李丽许佳平吴昕王岚盛雯婷张凤鸣
Owner TIANWEI NEW ENERGY HLDG
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